Patterning and templating for nanoelectronics

Kosmas Galatsis, Kang L. Wang, Mihri Ozkan, Cengiz S. Ozkan, Yu Huang, Jane P. Chang, Harold G. Monbouquette, Yong Chen, Paul Nealey, Youssry Botros

Research output: Contribution to journalArticlepeer-review

Abstract

The semiconductor industry will soon be launching 32 nm complementary metal oxidesemiconductor(CMOS) technology node using 193nmlithography patterning technology to fabricate microprocessors with more than 2 billion transistors. To ensure the survival of Moore's law, alternative patterning techniques that offer advantages beyond conventional top-down patterning are aggressively being explored. It is evident that most alternative patterning techniques may not offer compelling advantages to succeed conventional top-down lithography for silicon integrated circuits, but alternative approaches may well indeed offer functional advantages in realising next-generation information processing nanoarchitectures such as those based on cellular, bioinsipired, magnetic dot logic, and crossbar schemes. This paper highlights and evaluates some patterning methods from the Center on Functional Engineered Nano Architectonics in Los Angeles and discusses key benchmarking criteria with respect to CMOS scaling.

Original languageEnglish
Pages (from-to)769-778
Number of pages10
JournalAdvanced Materials
Volume22
Issue number6
DOIs
Publication statusPublished - 2010 Feb 9

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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