TY - JOUR
T1 - Pd-oxide- Al0.24Ga0.76As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor
AU - Cheng, Chin Chuan
AU - Tsai, Yan Ying
AU - Lin, Kun Wei
AU - Chen, Huey Ing
AU - Hsu, Wei Hsi
AU - Hung, Ching Wen
AU - Liu, Rong Chau
AU - Liu, Wen Chau
N1 - Funding Information:
Manuscript received August 24, 2004; revised December 9, 2004. This work was supported in part by the National Science Council of the Republic of China under Contract NSC 92-2215-E-006-007. The associate editor coordinating the review of this paper and approving it for publication was Prof. Eugenii Katz.
PY - 2006/4
Y1 - 2006/4
N2 - An interesting hydrogen sensor based on an Al0.24Ga 0.76As Schottky barrier high-electron mobility transistor with a catalytic Pd metal/oxide/semiconductor is fabricated and demonstrated. In comparison with traditional Schottky diodes or capacitance-voltage type hydrogen sensors, the studied device exhibits larger current variation, lower hydrogen detection limit, and shorter transient hydrogen response time. Besides, good hydrogen-sensing properties, such as significant drain current change, threshold voltage shift, and transconductance change of transistor behaviors, are obtained. Therefore, the studied device provides the promise for high-performance solid-state hydrogen sensors, optoelectronic integrated circuits, and microelectromechanical system applications.
AB - An interesting hydrogen sensor based on an Al0.24Ga 0.76As Schottky barrier high-electron mobility transistor with a catalytic Pd metal/oxide/semiconductor is fabricated and demonstrated. In comparison with traditional Schottky diodes or capacitance-voltage type hydrogen sensors, the studied device exhibits larger current variation, lower hydrogen detection limit, and shorter transient hydrogen response time. Besides, good hydrogen-sensing properties, such as significant drain current change, threshold voltage shift, and transconductance change of transistor behaviors, are obtained. Therefore, the studied device provides the promise for high-performance solid-state hydrogen sensors, optoelectronic integrated circuits, and microelectromechanical system applications.
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U2 - 10.1109/JSEN.2006.870157
DO - 10.1109/JSEN.2006.870157
M3 - Article
AN - SCOPUS:33645164403
SN - 1530-437X
VL - 6
SP - 287
EP - 291
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
IS - 2
ER -