Pd-oxide- Al0.24Ga0.76As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor

Chin Chuan Cheng; Yan Ying Tsai; Kun Wei Lin; Huey Ing Chen; Wei Hsi Hsu; Ching Wen Hung; Rong Chau Liu; Wen Chau Liu

doi:10.1109/JSEN.2006.870157

Pd-oxide- Al_0.24Ga_0.76As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor

Chin Chuan Cheng
, Yan Ying Tsai
, Kun Wei Lin
, Huey Ing Chen
, Wei Hsi Hsu
, Ching Wen Hung
, Rong Chau Liu
, Wen Chau Liu

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

An interesting hydrogen sensor based on an Al_0.24Ga _0.76As Schottky barrier high-electron mobility transistor with a catalytic Pd metal/oxide/semiconductor is fabricated and demonstrated. In comparison with traditional Schottky diodes or capacitance-voltage type hydrogen sensors, the studied device exhibits larger current variation, lower hydrogen detection limit, and shorter transient hydrogen response time. Besides, good hydrogen-sensing properties, such as significant drain current change, threshold voltage shift, and transconductance change of transistor behaviors, are obtained. Therefore, the studied device provides the promise for high-performance solid-state hydrogen sensors, optoelectronic integrated circuits, and microelectromechanical system applications.

Original language	English
Pages (from-to)	287-291
Number of pages	5
Journal	IEEE Sensors Journal
Volume	6
Issue number	2
DOIs	https://doi.org/10.1109/JSEN.2006.870157
Publication status	Published - 2006 Apr

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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10.1109/JSEN.2006.870157

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@article{c7edefbb88934d2f9de7a6322f739f70,

title = "Pd-oxide- Al0.24Ga0.76As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor",

abstract = "An interesting hydrogen sensor based on an Al0.24Ga 0.76As Schottky barrier high-electron mobility transistor with a catalytic Pd metal/oxide/semiconductor is fabricated and demonstrated. In comparison with traditional Schottky diodes or capacitance-voltage type hydrogen sensors, the studied device exhibits larger current variation, lower hydrogen detection limit, and shorter transient hydrogen response time. Besides, good hydrogen-sensing properties, such as significant drain current change, threshold voltage shift, and transconductance change of transistor behaviors, are obtained. Therefore, the studied device provides the promise for high-performance solid-state hydrogen sensors, optoelectronic integrated circuits, and microelectromechanical system applications.",

author = "Cheng, \{Chin Chuan\} and Tsai, \{Yan Ying\} and Lin, \{Kun Wei\} and Chen, \{Huey Ing\} and Hsu, \{Wei Hsi\} and Hung, \{Ching Wen\} and Liu, \{Rong Chau\} and Liu, \{Wen Chau\}",

note = "Funding Information: Manuscript received August 24, 2004; revised December 9, 2004. This work was supported in part by the National Science Council of the Republic of China under Contract NSC 92-2215-E-006-007. The associate editor coordinating the review of this paper and approving it for publication was Prof. Eugenii Katz.",

year = "2006",

month = apr,

doi = "10.1109/JSEN.2006.870157",

language = "English",

volume = "6",

pages = "287--291",

journal = "IEEE Sensors Journal",

issn = "1530-437X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Pd-oxide- Al0.24Ga0.76As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor

AU - Cheng, Chin Chuan

AU - Tsai, Yan Ying

AU - Lin, Kun Wei

AU - Chen, Huey Ing

AU - Hsu, Wei Hsi

AU - Hung, Ching Wen

AU - Liu, Rong Chau

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received August 24, 2004; revised December 9, 2004. This work was supported in part by the National Science Council of the Republic of China under Contract NSC 92-2215-E-006-007. The associate editor coordinating the review of this paper and approving it for publication was Prof. Eugenii Katz.

PY - 2006/4

Y1 - 2006/4

N2 - An interesting hydrogen sensor based on an Al0.24Ga 0.76As Schottky barrier high-electron mobility transistor with a catalytic Pd metal/oxide/semiconductor is fabricated and demonstrated. In comparison with traditional Schottky diodes or capacitance-voltage type hydrogen sensors, the studied device exhibits larger current variation, lower hydrogen detection limit, and shorter transient hydrogen response time. Besides, good hydrogen-sensing properties, such as significant drain current change, threshold voltage shift, and transconductance change of transistor behaviors, are obtained. Therefore, the studied device provides the promise for high-performance solid-state hydrogen sensors, optoelectronic integrated circuits, and microelectromechanical system applications.

AB - An interesting hydrogen sensor based on an Al0.24Ga 0.76As Schottky barrier high-electron mobility transistor with a catalytic Pd metal/oxide/semiconductor is fabricated and demonstrated. In comparison with traditional Schottky diodes or capacitance-voltage type hydrogen sensors, the studied device exhibits larger current variation, lower hydrogen detection limit, and shorter transient hydrogen response time. Besides, good hydrogen-sensing properties, such as significant drain current change, threshold voltage shift, and transconductance change of transistor behaviors, are obtained. Therefore, the studied device provides the promise for high-performance solid-state hydrogen sensors, optoelectronic integrated circuits, and microelectromechanical system applications.

UR - https://www.scopus.com/pages/publications/33645164403

UR - https://www.scopus.com/pages/publications/33645164403#tab=citedBy

U2 - 10.1109/JSEN.2006.870157

DO - 10.1109/JSEN.2006.870157

M3 - Article

AN - SCOPUS:33645164403

SN - 1530-437X

VL - 6

SP - 287

EP - 291

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 2

ER -

Pd-oxide- Al_0.24Ga_0.76As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor

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All Science Journal Classification (ASJC) codes

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