Peculiarities of the electronic transport in topological materials of Bi2Se3 and MoxW1-xTe2 (x = 0; 0.5; 1)

V. V. Chistyakov, A. N. Domozhirova, J. C.A. Huang, S. V. Naumov, V. V. Marchenkov

Research output: Contribution to journalConference article

Abstract

The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm and single crystals of topological Weyl semimetals MoxW1-xTe2 (x = 0; 0.5; 1) in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the film on its reciprocal thickness. It is suggested the existence of two different conduction channels in the Mo0.5W0.5Te2 compound.

Original languageEnglish
Article number012199
JournalJournal of Physics: Conference Series
Volume1410
Issue number1
DOIs
Publication statusPublished - 2019 Dec 20
Event6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 - Saint Petersburg, Russian Federation
Duration: 2019 Apr 222019 Apr 25

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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