Peculiarities of the electronic transport in topological materials of Bi2Se3 and MoxW1-xTe2 (x = 0; 0.5; 1)

V. V. Chistyakov; A. N. Domozhirova; J. C.A. Huang; S. V. Naumov; V. V. Marchenkov

doi:10.1088/1742-6596/1410/1/012199

Peculiarities of the electronic transport in topological materials of Bi₂Se₃ and Mo_xW_1-xTe₂ (x = 0; 0.5; 1)

V. V. Chistyakov, A. N. Domozhirova, J. C.A. Huang, S. V. Naumov, V. V. Marchenkov

Research output: Contribution to journal › Conference article

Abstract

The electrical resistivity of thin films of a topological insulator of Bi₂Se₃ with a thickness of 10 nm to 75 nm, single crystal of Bi₂Se₃ with thickness of 0.65 mm and single crystals of topological Weyl semimetals Mo_xW_1-xTe₂ (x = 0; 0.5; 1) in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi₂Se₃ films was observed, i.e. linear dependence of the conductivity of the film on its reciprocal thickness. It is suggested the existence of two different conduction channels in the Mo_0.5W_0.5Te₂ compound.

Original language	English
Article number	012199
Journal	Journal of Physics: Conference Series
Volume	1410
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/1410/1/012199
Publication status	Published - 2019 Dec 20
Event	6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 - Saint Petersburg, Russian Federation Duration: 2019 Apr 22 → 2019 Apr 25

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1088/1742-6596/1410/1/012199

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Chistyakov, V. V., Domozhirova, A. N., Huang, J. C. A., Naumov, S. V., & Marchenkov, V. V. (2019). Peculiarities of the electronic transport in topological materials of Bi₂Se₃ and Mo_xW_1-xTe₂ (x = 0; 0.5; 1). Journal of Physics: Conference Series, 1410(1), [012199]. https://doi.org/10.1088/1742-6596/1410/1/012199

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abstract = "The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm and single crystals of topological Weyl semimetals MoxW1-xTe2 (x = 0; 0.5; 1) in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the film on its reciprocal thickness. It is suggested the existence of two different conduction channels in the Mo0.5W0.5Te2 compound.",

author = "Chistyakov, {V. V.} and Domozhirova, {A. N.} and Huang, {J. C.A.} and Naumov, {S. V.} and Marchenkov, {V. V.}",

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T1 - Peculiarities of the electronic transport in topological materials of Bi2Se3 and MoxW1-xTe2 (x = 0; 0.5; 1)

AU - Chistyakov, V. V.

AU - Domozhirova, A. N.

AU - Huang, J. C.A.

AU - Naumov, S. V.

AU - Marchenkov, V. V.

PY - 2019/12/20

Y1 - 2019/12/20

N2 - The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm and single crystals of topological Weyl semimetals MoxW1-xTe2 (x = 0; 0.5; 1) in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the film on its reciprocal thickness. It is suggested the existence of two different conduction channels in the Mo0.5W0.5Te2 compound.

AB - The electrical resistivity of thin films of a topological insulator of Bi2Se3 with a thickness of 10 nm to 75 nm, single crystal of Bi2Se3 with thickness of 0.65 mm and single crystals of topological Weyl semimetals MoxW1-xTe2 (x = 0; 0.5; 1) in the temperature range from 4.2 to 300 K was measured. A size effect in the electrical conductivity of Bi2Se3 films was observed, i.e. linear dependence of the conductivity of the film on its reciprocal thickness. It is suggested the existence of two different conduction channels in the Mo0.5W0.5Te2 compound.

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