TY - GEN
T1 - Pentacene-based ambipoalr organic transistors with improve n-channel characteristics using polyethylenimine as a buffer layer
AU - Tseng, P. T.
AU - Huang, B. Y.
AU - Lin, B. R.
AU - Chou, W. Y.
AU - Cheng, H. L.
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology, Taiwan, through Grant MOST 105-2221-E-006-205-MY3. We are grateful to the National Center for High-performance computing of Taiwan for computer time and facilities.
PY - 2017/8/8
Y1 - 2017/8/8
N2 - In this study, we investigated pentacene-based ambipolar organic transistors using a linear polyethylenimine (LPEI) as gate dielectric buffer layer. We found that introducing an insulating LPEI layer between the pentacene active channel and the polymethylmetacrylate gate dielectric layer could enhance the n-channel electrical characteristics, such as early-on threshold voltage (Vth), sharp subthreshold swing (SS), and enlarged on/off current ratio, despite the surface of the LPEI layer disfavoring the growth of the high-quality pentacene active layer. These results were supported by frequency-dependent conductivity measurements, that is, the decreased interfacial trap density and mean interface trap time constant of the devices with the LPEI layer. In summary, the LPEI layer could improve the n-channel characteristics of pentacene-based ambipolar organic transistors to make them suitable for a vast range of potential applications.
AB - In this study, we investigated pentacene-based ambipolar organic transistors using a linear polyethylenimine (LPEI) as gate dielectric buffer layer. We found that introducing an insulating LPEI layer between the pentacene active channel and the polymethylmetacrylate gate dielectric layer could enhance the n-channel electrical characteristics, such as early-on threshold voltage (Vth), sharp subthreshold swing (SS), and enlarged on/off current ratio, despite the surface of the LPEI layer disfavoring the growth of the high-quality pentacene active layer. These results were supported by frequency-dependent conductivity measurements, that is, the decreased interfacial trap density and mean interface trap time constant of the devices with the LPEI layer. In summary, the LPEI layer could improve the n-channel characteristics of pentacene-based ambipolar organic transistors to make them suitable for a vast range of potential applications.
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M3 - Conference contribution
AN - SCOPUS:85034419801
T3 - AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings
SP - 179
EP - 182
BT - AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017
Y2 - 4 July 2017 through 7 July 2017
ER -