Abstract
Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (K = 11) dielectric constant but also has good dielectric strength. Moreover, the root-mean-square surface roughness and surface energy (γs) on the surface of the HfOx layer were 1.304 nm and 34.24 mj/cm 2, respectively. The smooth, as well as hydrophobic, surface of HfOx could facilitate the direct deposition of the pentacene film without an additional polymer treatment layer, leading to a high field-effect mobility of 3.8cm2/(V. s).
| Original language | English |
|---|---|
| Article number | 5229277 |
| Pages (from-to) | 1039-1041 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 30 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2009 Oct 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Wei, C. Y., Adriyanto, F., Lin, Y. J., Li, Y. C., Huang, T. J., Chou, D. W., & Wang, Y. H. (2009). Pentacene-based thin-film transistors with a solution-process hafnium oxide insulator. IEEE Electron Device Letters, 30(10), 1039-1041. [5229277]. https://doi.org/10.1109/LED.2009.2029876