Pentacene-based thin-film transistors with a solution-process hafnium oxide insulator

Chia Yu Wei; Feri Adriyanto; Yu Ju Lin; Yu Chang Li; Tong Jyun Huang; Dei Wei Chou; Yeong Her Wang

doi:10.1109/LED.2009.2029876

Pentacene-based thin-film transistors with a solution-process hafnium oxide insulator

Chia Yu Wei, Feri Adriyanto, Yu Ju Lin, Yu Chang Li, Tong Jyun Huang, Dei Wei Chou, Yeong Her Wang

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfO_x) as gate insulating layer have been demonstrated. The solution-process HfO_x could not only exhibit a high-permittivity (K = 11) dielectric constant but also has good dielectric strength. Moreover, the root-mean-square surface roughness and surface energy (γ_s) on the surface of the HfO_x layer were 1.304 nm and 34.24 mj/cm ², respectively. The smooth, as well as hydrophobic, surface of HfO_x could facilitate the direct deposition of the pentacene film without an additional polymer treatment layer, leading to a high field-effect mobility of 3.8cm²/(V. s).

Original language	English
Article number	5229277
Pages (from-to)	1039-1041
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	10
DOIs	https://doi.org/10.1109/LED.2009.2029876
Publication status	Published - 2009 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2009.2029876

Cite this

@article{49e52ed0f47b44b3bec062d0124461ad,

title = "Pentacene-based thin-film transistors with a solution-process hafnium oxide insulator",

abstract = "Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (K = 11) dielectric constant but also has good dielectric strength. Moreover, the root-mean-square surface roughness and surface energy (γs) on the surface of the HfOx layer were 1.304 nm and 34.24 mj/cm 2, respectively. The smooth, as well as hydrophobic, surface of HfOx could facilitate the direct deposition of the pentacene film without an additional polymer treatment layer, leading to a high field-effect mobility of 3.8cm2/(V. s).",

author = "Wei, {Chia Yu} and Feri Adriyanto and Lin, {Yu Ju} and Li, {Yu Chang} and Huang, {Tong Jyun} and Chou, {Dei Wei} and Wang, {Yeong Her}",

note = "Funding Information: Manuscript received June 22, 2009; revised July 25, 2009. First published September 1, 2009; current version published September 29, 2009. This work was supported in part by the National Science Council of Taiwan under Contract NSC 95-2221-E-006-428-MY3. The review of this letter was arranged by Editor A. Nathan. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.",

year = "2009",

month = oct,

doi = "10.1109/LED.2009.2029876",

language = "English",

volume = "30",

pages = "1039--1041",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Pentacene-based thin-film transistors with a solution-process hafnium oxide insulator

AU - Wei, Chia Yu

AU - Adriyanto, Feri

AU - Lin, Yu Ju

AU - Li, Yu Chang

AU - Huang, Tong Jyun

AU - Chou, Dei Wei

AU - Wang, Yeong Her

N1 - Funding Information: Manuscript received June 22, 2009; revised July 25, 2009. First published September 1, 2009; current version published September 29, 2009. This work was supported in part by the National Science Council of Taiwan under Contract NSC 95-2221-E-006-428-MY3. The review of this letter was arranged by Editor A. Nathan. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.

PY - 2009/10

Y1 - 2009/10

N2 - Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (K = 11) dielectric constant but also has good dielectric strength. Moreover, the root-mean-square surface roughness and surface energy (γs) on the surface of the HfOx layer were 1.304 nm and 34.24 mj/cm 2, respectively. The smooth, as well as hydrophobic, surface of HfOx could facilitate the direct deposition of the pentacene film without an additional polymer treatment layer, leading to a high field-effect mobility of 3.8cm2/(V. s).

AB - Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (K = 11) dielectric constant but also has good dielectric strength. Moreover, the root-mean-square surface roughness and surface energy (γs) on the surface of the HfOx layer were 1.304 nm and 34.24 mj/cm 2, respectively. The smooth, as well as hydrophobic, surface of HfOx could facilitate the direct deposition of the pentacene film without an additional polymer treatment layer, leading to a high field-effect mobility of 3.8cm2/(V. s).

UR - http://www.scopus.com/inward/record.url?scp=72049126619&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72049126619&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2029876

DO - 10.1109/LED.2009.2029876

M3 - Article

AN - SCOPUS:72049126619

VL - 30

SP - 1039

EP - 1041

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 10

M1 - 5229277

ER -

Pentacene-based thin-film transistors with a solution-process hafnium oxide insulator

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this