Perfect alignment of self-organized Ge islands on pre-grown Si stripe mesas

G. Jin, J. L. Liu, S. G. Thomas, Y. H. Luo, K. L. Wang, B. Y. Nguyen

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Self-organized Ge islands grown on patterned Si(001) substrates have been investigated. Selective epitaxial growth (SEG) of Si is carried out with gas-source molecular beam epitaxy to form Si stripe mesas followed by subsequent Ge island growth. Self-aligned Ge islands with regular spacing are formed on the 〈110〉-oriented ridges of the Si mesas. The regular spacing is driven by the repulsive interaction between the neighbor islands through the substrates. A mono-modal distribution of the islands has been observed on the ridges of the Si mesas. The spatial confinement as well as the preferential nucleation is believed to be the mechanism of this alignment of the self-organized Ge islands.

Original languageEnglish
Pages (from-to)551-554
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume70
Issue number5
DOIs
Publication statusPublished - 2000 May

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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