Performance advantage and energy saving of triangular-shaped FinFETs

Kehuey Wu, Wei Wen Ding, Meng Hsueh Chiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Detailed comparisons of FinFETs with triangular and rectangular fins were performed using numerical simulations. Although, with the same leakage current (Ioff), the on current (Idsat) of the triangular fin is less than that of the rectangular one, the 3-stage ring oscillator (RO) with triangular fins runs faster than the one with rectangular fins and consumes less energy due to better short channel control and smaller parasitic capacitance. In addition, with the triangular shape, the two side-channel surfaces are no longer (110) and benefit from reduced negative bias temperature instability (NBTI). All these make the FinFET with a triangular fin a smart choice.

Original languageEnglish
Title of host publication2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Pages143-146
Number of pages4
DOIs
Publication statusPublished - 2013
Event18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom
Duration: 2013 Sep 32013 Sep 5

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
CountryUnited Kingdom
CityGlasgow
Period13-09-0313-09-05

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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