Performance advantage and energy saving of triangular-shaped FinFETs

Kehuey Wu; Wei Wen Ding; Meng Hsueh Chiang

doi:10.1109/SISPAD.2013.6650595

Performance advantage and energy saving of triangular-shaped FinFETs

Kehuey Wu, Wei Wen Ding, Meng Hsueh Chiang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

Detailed comparisons of FinFETs with triangular and rectangular fins were performed using numerical simulations. Although, with the same leakage current (I_off), the on current (I_dsat) of the triangular fin is less than that of the rectangular one, the 3-stage ring oscillator (RO) with triangular fins runs faster than the one with rectangular fins and consumes less energy due to better short channel control and smaller parasitic capacitance. In addition, with the triangular shape, the two side-channel surfaces are no longer (110) and benefit from reduced negative bias temperature instability (NBTI). All these make the FinFET with a triangular fin a smart choice.

Original language	English
Title of host publication	2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Pages	143-146
Number of pages	4
DOIs	https://doi.org/10.1109/SISPAD.2013.6650595
Publication status	Published - 2013
Event	18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom Duration: 2013 Sept 3 → 2013 Sept 5

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other	18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Country/Territory	United Kingdom
City	Glasgow
Period	13-09-03 → 13-09-05

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computer Science Applications
Modelling and Simulation

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10.1109/SISPAD.2013.6650595

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Wu, K., Ding, W. W., & Chiang, M. H. (2013). Performance advantage and energy saving of triangular-shaped FinFETs. In 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 (pp. 143-146). Article 6650595 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2013.6650595

@inproceedings{ed27f759138a4f32b54a03c05eceab50,

title = "Performance advantage and energy saving of triangular-shaped FinFETs",

abstract = "Detailed comparisons of FinFETs with triangular and rectangular fins were performed using numerical simulations. Although, with the same leakage current (Ioff), the on current (Idsat) of the triangular fin is less than that of the rectangular one, the 3-stage ring oscillator (RO) with triangular fins runs faster than the one with rectangular fins and consumes less energy due to better short channel control and smaller parasitic capacitance. In addition, with the triangular shape, the two side-channel surfaces are no longer (110) and benefit from reduced negative bias temperature instability (NBTI). All these make the FinFET with a triangular fin a smart choice.",

author = "Kehuey Wu and Ding, {Wei Wen} and Chiang, {Meng Hsueh}",

year = "2013",

doi = "10.1109/SISPAD.2013.6650595",

language = "English",

isbn = "9781467357364",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

pages = "143--146",

booktitle = "2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013",

note = "18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 ; Conference date: 03-09-2013 Through 05-09-2013",

}

Wu, K, Ding, WW & Chiang, MH 2013, Performance advantage and energy saving of triangular-shaped FinFETs. in 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013., 6650595, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 143-146, 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013, Glasgow, United Kingdom, 13-09-03. https://doi.org/10.1109/SISPAD.2013.6650595

Performance advantage and energy saving of triangular-shaped FinFETs. / Wu, Kehuey; Ding, Wei Wen; Chiang, Meng Hsueh.
2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013. 2013. p. 143-146 6650595 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Performance advantage and energy saving of triangular-shaped FinFETs

AU - Wu, Kehuey

AU - Ding, Wei Wen

AU - Chiang, Meng Hsueh

PY - 2013

Y1 - 2013

N2 - Detailed comparisons of FinFETs with triangular and rectangular fins were performed using numerical simulations. Although, with the same leakage current (Ioff), the on current (Idsat) of the triangular fin is less than that of the rectangular one, the 3-stage ring oscillator (RO) with triangular fins runs faster than the one with rectangular fins and consumes less energy due to better short channel control and smaller parasitic capacitance. In addition, with the triangular shape, the two side-channel surfaces are no longer (110) and benefit from reduced negative bias temperature instability (NBTI). All these make the FinFET with a triangular fin a smart choice.

AB - Detailed comparisons of FinFETs with triangular and rectangular fins were performed using numerical simulations. Although, with the same leakage current (Ioff), the on current (Idsat) of the triangular fin is less than that of the rectangular one, the 3-stage ring oscillator (RO) with triangular fins runs faster than the one with rectangular fins and consumes less energy due to better short channel control and smaller parasitic capacitance. In addition, with the triangular shape, the two side-channel surfaces are no longer (110) and benefit from reduced negative bias temperature instability (NBTI). All these make the FinFET with a triangular fin a smart choice.

UR - http://www.scopus.com/inward/record.url?scp=84891122704&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84891122704&partnerID=8YFLogxK

U2 - 10.1109/SISPAD.2013.6650595

DO - 10.1109/SISPAD.2013.6650595

M3 - Conference contribution

AN - SCOPUS:84891122704

SN - 9781467357364

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 143

EP - 146

BT - 2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013

T2 - 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013

Y2 - 3 September 2013 through 5 September 2013

ER -

Performance advantage and energy saving of triangular-shaped FinFETs

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