Performance and Reliability Comparison between Asymmetric and Symmetric LDD Devices and Logic Gates

Jone F. Chen; Jiang Tao; Peng Fang; Chenming Hu

doi:10.1109/4.748188

Performance and Reliability Comparison between Asymmetric and Symmetric LDD Devices and Logic Gates

Jone F. Chen, Jiang Tao, Peng Fang, Chenming Hu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The performance and reliability of NMOSFET asymmetric lightly doped drain (LDD) devices (with no LDD on the source side) are compared with those of conventional LDD devices. At a fixed V_dd, asymmetric LDD devices exhibit higher I_dsat and shorter hot-carrier lifetime. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower V_dd while higher I_dsat is retained. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric and conventional LDD devices is also simulated and compared.

Original language	English
Pages (from-to)	367-371
Number of pages	5
Journal	IEEE Journal of Solid-State Circuits
Volume	34
Issue number	3
DOIs	https://doi.org/10.1109/4.748188
Publication status	Published - 1999

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/4.748188

Cite this

@article{58dacda1350a43c7a459de943fe17f3b,

title = "Performance and Reliability Comparison between Asymmetric and Symmetric LDD Devices and Logic Gates",

abstract = "The performance and reliability of NMOSFET asymmetric lightly doped drain (LDD) devices (with no LDD on the source side) are compared with those of conventional LDD devices. At a fixed Vdd, asymmetric LDD devices exhibit higher Idsat and shorter hot-carrier lifetime. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd while higher Idsat is retained. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric and conventional LDD devices is also simulated and compared.",

author = "Chen, {Jone F.} and Jiang Tao and Peng Fang and Chenming Hu",

note = "Funding Information: Manuscript received August 4, 1998; revised October 29, 1998. This work was supported in part by the Office of Naval Research under Contract FDN00014-96-1-0369. J. F. Chen and C. Hu are with the Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720 USA. J. Tao and P. Fang are with Advanced Micro Devices, Inc., Sunnyvale, CA 94088 USA. Publisher Item Identifier S 0018-9200(99)01647-9.",

year = "1999",

doi = "10.1109/4.748188",

language = "English",

volume = "34",

pages = "367--371",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Performance and Reliability Comparison between Asymmetric and Symmetric LDD Devices and Logic Gates

AU - Chen, Jone F.

AU - Tao, Jiang

AU - Fang, Peng

AU - Hu, Chenming

N1 - Funding Information: Manuscript received August 4, 1998; revised October 29, 1998. This work was supported in part by the Office of Naval Research under Contract FDN00014-96-1-0369. J. F. Chen and C. Hu are with the Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720 USA. J. Tao and P. Fang are with Advanced Micro Devices, Inc., Sunnyvale, CA 94088 USA. Publisher Item Identifier S 0018-9200(99)01647-9.

PY - 1999

Y1 - 1999

N2 - The performance and reliability of NMOSFET asymmetric lightly doped drain (LDD) devices (with no LDD on the source side) are compared with those of conventional LDD devices. At a fixed Vdd, asymmetric LDD devices exhibit higher Idsat and shorter hot-carrier lifetime. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd while higher Idsat is retained. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric and conventional LDD devices is also simulated and compared.

AB - The performance and reliability of NMOSFET asymmetric lightly doped drain (LDD) devices (with no LDD on the source side) are compared with those of conventional LDD devices. At a fixed Vdd, asymmetric LDD devices exhibit higher Idsat and shorter hot-carrier lifetime. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd while higher Idsat is retained. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric and conventional LDD devices is also simulated and compared.

UR - http://www.scopus.com/inward/record.url?scp=0033098648&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033098648&partnerID=8YFLogxK

U2 - 10.1109/4.748188

DO - 10.1109/4.748188

M3 - Article

AN - SCOPUS:0033098648

SN - 0018-9200

VL - 34

SP - 367

EP - 371

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 3

ER -

Performance and Reliability Comparison between Asymmetric and Symmetric LDD Devices and Logic Gates

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this