Performance and reliability of asymmetric LDD devices and logic gates

Jone-Fang Chen; Jiang Tao; Peng Fang; Chenming Hu

Performance and reliability of asymmetric LDD devices and logic gates

Jone-Fang Chen, Jiang Tao, Peng Fang, Chenming Hu

Research output: Contribution to journal › Conference article › peer-review

Abstract

The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher I_dsat and larger I_sub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower V_dd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared.

Original language	English
Pages (from-to)	533-536
Number of pages	4
Journal	Proceedings of the Custom Integrated Circuits Conference
Publication status	Published - 1998 Jan 1
Event	Proceedings of the 1998 IEEE Custom Integrated Circuits Conference - Santa Clara, CA, USA Duration: 1998 May 11 → 1998 May 14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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title = "Performance and reliability of asymmetric LDD devices and logic gates",

abstract = "The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher Idsat and larger Isub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared.",

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note = "Proceedings of the 1998 IEEE Custom Integrated Circuits Conference ; Conference date: 11-05-1998 Through 14-05-1998",

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AU - Tao, Jiang

AU - Fang, Peng

AU - Hu, Chenming

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N2 - The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher Idsat and larger Isub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared.

AB - The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher Idsat and larger Isub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared.

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