Performance characterization of InGaP schottky contact with ITO transparent electrodes

Ching Ting Lee; Ching Hung Fu; Chang Da Tsai; Wei Lin

doi:10.1007/s11664-998-0155-7

Performance characterization of InGaP schottky contact with ITO transparent electrodes

Ching Ting Lee, Ching Hung Fu, Chang Da Tsai, Wei Lin

Department of Photonics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We present the Schottky performance of transparent ITO on a wide bandgap InGaP semiconductor. For a transparent ITO Schottky electrode on InGaP, a transmittance of higher than 0.9, and a refractive index of 1.88 for a wavelength of 820 nm were obtained. We measured its associated resistivity as 1.94 × 10^-3 Ω-cm after annealing at 300°C for 60 min under oxygen ambience. The effect of the thermal annealing temperature on the crystallization of ITO was examined by x-ray diffraction. As well an associated Schottky barrier height of 0.93 eV and an ideality factor of 1.07 were found using the Schottky diode configuration. The results indicate that ITO is a promising transparent Schottky material for electrooptical devices based on InGaP structures.

Original language	English
Pages (from-to)	1017-1021
Number of pages	5
Journal	Journal of Electronic Materials
Volume	27
Issue number	9
DOIs	https://doi.org/10.1007/s11664-998-0155-7
Publication status	Published - 1998 Sept

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-998-0155-7

Cite this

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title = "Performance characterization of InGaP schottky contact with ITO transparent electrodes",

abstract = "We present the Schottky performance of transparent ITO on a wide bandgap InGaP semiconductor. For a transparent ITO Schottky electrode on InGaP, a transmittance of higher than 0.9, and a refractive index of 1.88 for a wavelength of 820 nm were obtained. We measured its associated resistivity as 1.94 × 10-3 Ω-cm after annealing at 300°C for 60 min under oxygen ambience. The effect of the thermal annealing temperature on the crystallization of ITO was examined by x-ray diffraction. As well an associated Schottky barrier height of 0.93 eV and an ideality factor of 1.07 were found using the Schottky diode configuration. The results indicate that ITO is a promising transparent Schottky material for electrooptical devices based on InGaP structures.",

author = "Lee, {Ching Ting} and Fu, {Ching Hung} and Tsai, {Chang Da} and Wei Lin",

note = "Funding Information: This work was supported by the National Science Council of the Republic of China under Grant NSC 86-2215-E008-017. The authors would also like to thank the reviewers for their useful suggestions and comments.",

year = "1998",

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doi = "10.1007/s11664-998-0155-7",

language = "English",

volume = "27",

pages = "1017--1021",

journal = "Journal of Electronic Materials",

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publisher = "Springer New York",

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TY - JOUR

T1 - Performance characterization of InGaP schottky contact with ITO transparent electrodes

AU - Lee, Ching Ting

AU - Fu, Ching Hung

AU - Tsai, Chang Da

AU - Lin, Wei

N1 - Funding Information: This work was supported by the National Science Council of the Republic of China under Grant NSC 86-2215-E008-017. The authors would also like to thank the reviewers for their useful suggestions and comments.

PY - 1998/9

Y1 - 1998/9

N2 - We present the Schottky performance of transparent ITO on a wide bandgap InGaP semiconductor. For a transparent ITO Schottky electrode on InGaP, a transmittance of higher than 0.9, and a refractive index of 1.88 for a wavelength of 820 nm were obtained. We measured its associated resistivity as 1.94 × 10-3 Ω-cm after annealing at 300°C for 60 min under oxygen ambience. The effect of the thermal annealing temperature on the crystallization of ITO was examined by x-ray diffraction. As well an associated Schottky barrier height of 0.93 eV and an ideality factor of 1.07 were found using the Schottky diode configuration. The results indicate that ITO is a promising transparent Schottky material for electrooptical devices based on InGaP structures.

AB - We present the Schottky performance of transparent ITO on a wide bandgap InGaP semiconductor. For a transparent ITO Schottky electrode on InGaP, a transmittance of higher than 0.9, and a refractive index of 1.88 for a wavelength of 820 nm were obtained. We measured its associated resistivity as 1.94 × 10-3 Ω-cm after annealing at 300°C for 60 min under oxygen ambience. The effect of the thermal annealing temperature on the crystallization of ITO was examined by x-ray diffraction. As well an associated Schottky barrier height of 0.93 eV and an ideality factor of 1.07 were found using the Schottky diode configuration. The results indicate that ITO is a promising transparent Schottky material for electrooptical devices based on InGaP structures.

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 9

ER -

Performance characterization of InGaP schottky contact with ITO transparent electrodes

Abstract

All Science Journal Classification (ASJC) codes

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