Performance characterization of InGaP schottky contact with ITO transparent electrodes

Ching Ting Lee, Ching Hung Fu, Chang Da Tsai, Wei Lin

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4 Citations (Scopus)


We present the Schottky performance of transparent ITO on a wide bandgap InGaP semiconductor. For a transparent ITO Schottky electrode on InGaP, a transmittance of higher than 0.9, and a refractive index of 1.88 for a wavelength of 820 nm were obtained. We measured its associated resistivity as 1.94 × 10-3 Ω-cm after annealing at 300°C for 60 min under oxygen ambience. The effect of the thermal annealing temperature on the crystallization of ITO was examined by x-ray diffraction. As well an associated Schottky barrier height of 0.93 eV and an ideality factor of 1.07 were found using the Schottky diode configuration. The results indicate that ITO is a promising transparent Schottky material for electrooptical devices based on InGaP structures.

Original languageEnglish
Pages (from-to)1017-1021
Number of pages5
JournalJournal of Electronic Materials
Issue number9
Publication statusPublished - 1998 Sept

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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