Performance comparison of non-planar MOSFETs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Three different non-planar MOSFETs including FinFET, and rectangular/circuiar gate-all-around (GAA) MOSFETs are compared based on the same electrostatic parameter-scale length. Device characteristics and intrinsic gate delay are predicted using 3-D numerical simulations. FinFET is found to have an advantage in speed though it is most sensitive to process variation on the fin width as compared with the GAA counterpart. Due to limited drive current of each GAA MOSFET, multiple wire or stack wire will be needed when performance is of concern.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Pages9-12
Number of pages4
Publication statusPublished - 2013 Aug 9
EventNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States
Duration: 2013 May 122013 May 16

Publication series

NameTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Volume2

Other

OtherNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
CountryUnited States
CityWashington, DC
Period13-05-1213-05-16

All Science Journal Classification (ASJC) codes

  • Biotechnology

Fingerprint Dive into the research topics of 'Performance comparison of non-planar MOSFETs'. Together they form a unique fingerprint.

Cite this