TY - GEN
T1 - Performance comparison of non-planar MOSFETs
AU - Liao, Yi Bo
AU - Chiang, Meng Hsueh
AU - Hsu, Wei Chou
PY - 2013/8/9
Y1 - 2013/8/9
N2 - Three different non-planar MOSFETs including FinFET, and rectangular/circuiar gate-all-around (GAA) MOSFETs are compared based on the same electrostatic parameter-scale length. Device characteristics and intrinsic gate delay are predicted using 3-D numerical simulations. FinFET is found to have an advantage in speed though it is most sensitive to process variation on the fin width as compared with the GAA counterpart. Due to limited drive current of each GAA MOSFET, multiple wire or stack wire will be needed when performance is of concern.
AB - Three different non-planar MOSFETs including FinFET, and rectangular/circuiar gate-all-around (GAA) MOSFETs are compared based on the same electrostatic parameter-scale length. Device characteristics and intrinsic gate delay are predicted using 3-D numerical simulations. FinFET is found to have an advantage in speed though it is most sensitive to process variation on the fin width as compared with the GAA counterpart. Due to limited drive current of each GAA MOSFET, multiple wire or stack wire will be needed when performance is of concern.
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M3 - Conference contribution
AN - SCOPUS:84881096194
SN - 9781482205848
T3 - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
SP - 9
EP - 12
BT - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
T2 - Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Y2 - 12 May 2013 through 16 May 2013
ER -