Engineering & Materials Science
Gate dielectrics
100%
Oxide semiconductors
83%
High electron mobility transistors
81%
Plasmas
64%
Metals
45%
Leakage currents
30%
Annealing
27%
Dangling bonds
25%
Temperature
22%
Hafnium
22%
Interface states
21%
Inductively coupled plasma
20%
Vacancies
19%
Passivation
17%
Threshold voltage
15%
Crystalline materials
14%
Aluminum
10%
Chemical Compounds
Electron Mobility
84%
Dielectric Material
61%
Metal Oxide
58%
Semiconductor
53%
Plasma
43%
Leakage Current
36%
Band Offset
22%
Annealing
22%
Tunneling Current
21%
Interface State
21%
Dangling Bond
18%
Hafnium Atom
16%
Chemical Passivation
14%
Etching
12%
Voltage
10%
Amorphous Material
9%
Surface
8%
Ambient Reaction Temperature
7%
Reduction
6%
Physics & Astronomy
engineering
51%
high electron mobility transistors
45%
metal oxide semiconductors
45%
augmentation
42%
performance
31%
leakage
14%
aluminates
10%
hafnium
10%
annealing
10%
threshold voltage
8%
passivity
8%
temperature
7%
inclusions
6%
etching
6%
slopes
6%
aluminum
6%
room temperature
4%