Performance enhancement mechanisms of passivated InN/GaN-heterostructured ion-selective field-effect-transistor pH sensors

Engineering

• Field-Effect Transistor 100%
• Passivation 66%
• Surface State 66%
• Sensing Membrane 66%
• Heterojunctions 33%
• Nonlinear Behavior 33%
• Fermi Level 33%
• Sensing Performance 33%
• Acid Solution 33%
• Binding Site 33%
• Sensitivity Parameter 33%
• Electron Concentration 33%

Material Science

• Field Effect Transistor 100%
• Surface (Surface Science) 66%
• Heterojunction 33%
• Density 33%
• Sodium 33%
• Potassium 33%

Keyphrases

• Performance Enhancement Mechanisms 100%
• Pining Effect 20%