Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation

Ssu I. Fu, Po Hsien Lai, Yan Ying Tsai, Ching Wen Hung, Chih Hung Yen, Shiou Ying Cheng, Wen Chau Liu

Research output: Contribution to journalReview articlepeer-review

4 Citations (Scopus)


An interesting two-step passivation (with ledge structure and sulphide based chemical treatment) on base surface, for the first time, is demonstrated to study the temperature-dependent DC characteristics and noise performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). Improved transistor behaviors on maximum current gain β max , offset voltage ΔV CE , and emitter size effect are obtained by using the two-step passivation. Moreover, the device with the two-step passivation exhibits relatively temperature-independent and improved thermal stable performances as the temperature is increased. Therefore, the two-step passivationed device can be used for high-temperature and low-power electronics applications.

Original languageEnglish
Pages (from-to)7755-7759
Number of pages5
JournalApplied Surface Science
Issue number22
Publication statusPublished - 2006 Sept 15

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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