Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation

Ssu I. Fu; Po Hsien Lai; Yan Ying Tsai; Ching Wen Hung; Chih Hung Yen; Shiou Ying Cheng; Wen Chau Liu

doi:10.1016/j.apsusc.2005.09.070

Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation

Ssu I. Fu, Po Hsien Lai, Yan Ying Tsai, Ching Wen Hung, Chih Hung Yen, Shiou Ying Cheng, Wen Chau Liu

Research output: Contribution to journal › Review article › peer-review

4 Citations (Scopus)

Abstract

An interesting two-step passivation (with ledge structure and sulphide based chemical treatment) on base surface, for the first time, is demonstrated to study the temperature-dependent DC characteristics and noise performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). Improved transistor behaviors on maximum current gain β _max , offset voltage ΔV _CE , and emitter size effect are obtained by using the two-step passivation. Moreover, the device with the two-step passivation exhibits relatively temperature-independent and improved thermal stable performances as the temperature is increased. Therefore, the two-step passivationed device can be used for high-temperature and low-power electronics applications.

Original language	English
Pages (from-to)	7755-7759
Number of pages	5
Journal	Applied Surface Science
Volume	252
Issue number	22
DOIs	https://doi.org/10.1016/j.apsusc.2005.09.070
Publication status	Published - 2006 Sept 15

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2005.09.070

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title = "Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation",

abstract = " An interesting two-step passivation (with ledge structure and sulphide based chemical treatment) on base surface, for the first time, is demonstrated to study the temperature-dependent DC characteristics and noise performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). Improved transistor behaviors on maximum current gain β max , offset voltage ΔV CE , and emitter size effect are obtained by using the two-step passivation. Moreover, the device with the two-step passivation exhibits relatively temperature-independent and improved thermal stable performances as the temperature is increased. Therefore, the two-step passivationed device can be used for high-temperature and low-power electronics applications.",

author = "Fu, {Ssu I.} and Lai, {Po Hsien} and Tsai, {Yan Ying} and Hung, {Ching Wen} and Yen, {Chih Hung} and Cheng, {Shiou Ying} and Liu, {Wen Chau}",

note = "Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC 94-2215-E006-060 and NSC 94-2215-E197-002. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",

year = "2006",

month = sep,

day = "15",

doi = "10.1016/j.apsusc.2005.09.070",

language = "English",

volume = "252",

pages = "7755--7759",

journal = "Applied Surface Science",

issn = "0169-4332",

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T1 - Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation

AU - Fu, Ssu I.

AU - Lai, Po Hsien

AU - Tsai, Yan Ying

AU - Hung, Ching Wen

AU - Yen, Chih Hung

AU - Cheng, Shiou Ying

AU - Liu, Wen Chau

N1 - Funding Information: Part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC 94-2215-E006-060 and NSC 94-2215-E197-002. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2006/9/15

Y1 - 2006/9/15

N2 - An interesting two-step passivation (with ledge structure and sulphide based chemical treatment) on base surface, for the first time, is demonstrated to study the temperature-dependent DC characteristics and noise performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). Improved transistor behaviors on maximum current gain β max , offset voltage ΔV CE , and emitter size effect are obtained by using the two-step passivation. Moreover, the device with the two-step passivation exhibits relatively temperature-independent and improved thermal stable performances as the temperature is increased. Therefore, the two-step passivationed device can be used for high-temperature and low-power electronics applications.

AB - An interesting two-step passivation (with ledge structure and sulphide based chemical treatment) on base surface, for the first time, is demonstrated to study the temperature-dependent DC characteristics and noise performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). Improved transistor behaviors on maximum current gain β max , offset voltage ΔV CE , and emitter size effect are obtained by using the two-step passivation. Moreover, the device with the two-step passivation exhibits relatively temperature-independent and improved thermal stable performances as the temperature is increased. Therefore, the two-step passivationed device can be used for high-temperature and low-power electronics applications.

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U2 - 10.1016/j.apsusc.2005.09.070

DO - 10.1016/j.apsusc.2005.09.070

M3 - Review article

AN - SCOPUS:33747876127

SN - 0169-4332

VL - 252

SP - 7755

EP - 7759

JO - Applied Surface Science

JF - Applied Surface Science

IS - 22

ER -

Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation

Abstract

All Science Journal Classification (ASJC) codes

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