Performance Enhancement of GaN-Based Light-Emitting Diodes by Using Transparent Ag Metal Line Patterns

Chi Shiang Hsu, Sheng Yi Chen, Jian Kai Liou, Wei Cheng Chen, Ching Hong Chang, Chun Yen Chen, Shiou Ying Cheng, Der Feng Guo, Wen-Chau Liu

Research output: Contribution to journalArticle

Abstract

Characteristics of GaN-based light-emitting diodes (LEDs) with 1-D stripe (B-series) and 2-D grid (A-series) Ag metal line patterns are comprehensively studied and reported. Due to the enhanced current spreading capability, as compared to a conventional LED, the significantly reduced forward voltages (>500 mV) of studied A- and B-series devices are obtained under the forward current of 20 mA. Particularly, a very low current coefficient of junction temperature $\text{T}-{\text {j}}$ (0.03°/mA) could be obtained for studied A- and B-series devices which is remarkably superior to the conventional device (0.61°/mA). It means that the undesired thermal effect is nearly negligible in studied devices. Experimentally, based on the less absorption effect of photons from Ag metal lines, the 1-D stripe design (B-series) shows better optical properties than 2-D grid one (A-series). Therefore, based on the appropriate design of transparent 1-D Ag pattern, the improved performance of GaN-based LEDs, including smaller forward voltage, higher light output power, higher external quantum efficiency, higher wall-plug efficiency, and negligible current dependence (wider current operating regime) could be simultaneously attained.

Original languageEnglish
Article number7911252
Pages (from-to)2542-2548
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume64
Issue number6
DOIs
Publication statusPublished - 2017 Jun 1

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Light emitting diodes
Metals
Electric potential
Quantum efficiency
Thermal effects
Photons
Optical properties
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Hsu, Chi Shiang ; Chen, Sheng Yi ; Liou, Jian Kai ; Chen, Wei Cheng ; Chang, Ching Hong ; Chen, Chun Yen ; Cheng, Shiou Ying ; Guo, Der Feng ; Liu, Wen-Chau. / Performance Enhancement of GaN-Based Light-Emitting Diodes by Using Transparent Ag Metal Line Patterns. In: IEEE Transactions on Electron Devices. 2017 ; Vol. 64, No. 6. pp. 2542-2548.
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abstract = "Characteristics of GaN-based light-emitting diodes (LEDs) with 1-D stripe (B-series) and 2-D grid (A-series) Ag metal line patterns are comprehensively studied and reported. Due to the enhanced current spreading capability, as compared to a conventional LED, the significantly reduced forward voltages (>500 mV) of studied A- and B-series devices are obtained under the forward current of 20 mA. Particularly, a very low current coefficient of junction temperature $\text{T}-{\text {j}}$ (0.03°/mA) could be obtained for studied A- and B-series devices which is remarkably superior to the conventional device (0.61°/mA). It means that the undesired thermal effect is nearly negligible in studied devices. Experimentally, based on the less absorption effect of photons from Ag metal lines, the 1-D stripe design (B-series) shows better optical properties than 2-D grid one (A-series). Therefore, based on the appropriate design of transparent 1-D Ag pattern, the improved performance of GaN-based LEDs, including smaller forward voltage, higher light output power, higher external quantum efficiency, higher wall-plug efficiency, and negligible current dependence (wider current operating regime) could be simultaneously attained.",
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Hsu, CS, Chen, SY, Liou, JK, Chen, WC, Chang, CH, Chen, CY, Cheng, SY, Guo, DF & Liu, W-C 2017, 'Performance Enhancement of GaN-Based Light-Emitting Diodes by Using Transparent Ag Metal Line Patterns', IEEE Transactions on Electron Devices, vol. 64, no. 6, 7911252, pp. 2542-2548. https://doi.org/10.1109/TED.2017.2691411

Performance Enhancement of GaN-Based Light-Emitting Diodes by Using Transparent Ag Metal Line Patterns. / Hsu, Chi Shiang; Chen, Sheng Yi; Liou, Jian Kai; Chen, Wei Cheng; Chang, Ching Hong; Chen, Chun Yen; Cheng, Shiou Ying; Guo, Der Feng; Liu, Wen-Chau.

In: IEEE Transactions on Electron Devices, Vol. 64, No. 6, 7911252, 01.06.2017, p. 2542-2548.

Research output: Contribution to journalArticle

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T1 - Performance Enhancement of GaN-Based Light-Emitting Diodes by Using Transparent Ag Metal Line Patterns

AU - Hsu, Chi Shiang

AU - Chen, Sheng Yi

AU - Liou, Jian Kai

AU - Chen, Wei Cheng

AU - Chang, Ching Hong

AU - Chen, Chun Yen

AU - Cheng, Shiou Ying

AU - Guo, Der Feng

AU - Liu, Wen-Chau

PY - 2017/6/1

Y1 - 2017/6/1

N2 - Characteristics of GaN-based light-emitting diodes (LEDs) with 1-D stripe (B-series) and 2-D grid (A-series) Ag metal line patterns are comprehensively studied and reported. Due to the enhanced current spreading capability, as compared to a conventional LED, the significantly reduced forward voltages (>500 mV) of studied A- and B-series devices are obtained under the forward current of 20 mA. Particularly, a very low current coefficient of junction temperature $\text{T}-{\text {j}}$ (0.03°/mA) could be obtained for studied A- and B-series devices which is remarkably superior to the conventional device (0.61°/mA). It means that the undesired thermal effect is nearly negligible in studied devices. Experimentally, based on the less absorption effect of photons from Ag metal lines, the 1-D stripe design (B-series) shows better optical properties than 2-D grid one (A-series). Therefore, based on the appropriate design of transparent 1-D Ag pattern, the improved performance of GaN-based LEDs, including smaller forward voltage, higher light output power, higher external quantum efficiency, higher wall-plug efficiency, and negligible current dependence (wider current operating regime) could be simultaneously attained.

AB - Characteristics of GaN-based light-emitting diodes (LEDs) with 1-D stripe (B-series) and 2-D grid (A-series) Ag metal line patterns are comprehensively studied and reported. Due to the enhanced current spreading capability, as compared to a conventional LED, the significantly reduced forward voltages (>500 mV) of studied A- and B-series devices are obtained under the forward current of 20 mA. Particularly, a very low current coefficient of junction temperature $\text{T}-{\text {j}}$ (0.03°/mA) could be obtained for studied A- and B-series devices which is remarkably superior to the conventional device (0.61°/mA). It means that the undesired thermal effect is nearly negligible in studied devices. Experimentally, based on the less absorption effect of photons from Ag metal lines, the 1-D stripe design (B-series) shows better optical properties than 2-D grid one (A-series). Therefore, based on the appropriate design of transparent 1-D Ag pattern, the improved performance of GaN-based LEDs, including smaller forward voltage, higher light output power, higher external quantum efficiency, higher wall-plug efficiency, and negligible current dependence (wider current operating regime) could be simultaneously attained.

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