Performance enhancement of high-current-injected electrically programmable fuse with compressive-stress nitride layer

Chang Chien Wong, Sheng Po Chang, Hwai Fu Tu, Ching Hsiang Tseng, Wei Shou Chen, Shoou Jinn Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This letter presents the performance enhancement of an electrically programmable fuse with a compressive-stress nitride layer. Silicon nitride capping layers with a tensile or compressive stress are used with compatible steps of the fabrication process for complementary metal-oxide-semiconductors, so as to obtain the electrical and physical characteristics of the postprogrammed fuses; these characteristics are discussed here. At a higher programming current, the compressive capping film enhances void nucleation, which not only increases the programmed fuse resistance, but also acts as a NiSi refill inhibitor to provide more reliable programmed electrical-fuse functionality. In addition, a fuse that has a compressive-stress nitride layer is capable of operating under high-current injection, which makes it promising mechanism for use in high-voltage device applications.

Original languageEnglish
Article number6720128
Pages (from-to)297-299
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number3
DOIs
Publication statusPublished - 2014 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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