This letter presents the performance enhancement of an electrically programmable fuse with a compressive-stress nitride layer. Silicon nitride capping layers with a tensile or compressive stress are used with compatible steps of the fabrication process for complementary metal-oxide-semiconductors, so as to obtain the electrical and physical characteristics of the postprogrammed fuses; these characteristics are discussed here. At a higher programming current, the compressive capping film enhances void nucleation, which not only increases the programmed fuse resistance, but also acts as a NiSi refill inhibitor to provide more reliable programmed electrical-fuse functionality. In addition, a fuse that has a compressive-stress nitride layer is capable of operating under high-current injection, which makes it promising mechanism for use in high-voltage device applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering