A thin (200Å) WSiN film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55μm. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared w'ith the conventional thick metal gate MSM detectors.
|Number of pages||3|
|Publication status||Published - 1995 Sept 14|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering