TY - GEN
T1 - Performance evaluation of stacked gate-all-around MOSFETs at 7 and 10 nm technology nodes
AU - Wu, Meng Yen
AU - Chiang, Meng Hsueh
N1 - Funding Information:
This work was partially supported by the Ministry of Science and Technology of Taiwan. The authors are grateful to the National Nano Device Laboratories, National Center for High-Performance Computing and National Chip Implementation Center for technical support and computational facilities.
Publisher Copyright:
© 2016 IEEE.
Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.
PY - 2016/5/25
Y1 - 2016/5/25
N2 - Performance evaluation of stacked gate-all-around (GAA) MOSFETs on device scaling and performance benchmark against FinFETs based on scale length are presented. While stacked GAA technique provides higher current (per pitch), FinFET counterpart shows its advantage in intrinsic gate delay. Such advantage becomes even more significant toward smaller technology node. By adjusting the aspect ratio of GAA devices based on same scale length, the thinner rectangular GAA case allows more stacked layers than the square case at the same total height and hence provides higher current. However, comparable intrinsic speeds are predicted for both cases.
AB - Performance evaluation of stacked gate-all-around (GAA) MOSFETs on device scaling and performance benchmark against FinFETs based on scale length are presented. While stacked GAA technique provides higher current (per pitch), FinFET counterpart shows its advantage in intrinsic gate delay. Such advantage becomes even more significant toward smaller technology node. By adjusting the aspect ratio of GAA devices based on same scale length, the thinner rectangular GAA case allows more stacked layers than the square case at the same total height and hence provides higher current. However, comparable intrinsic speeds are predicted for both cases.
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U2 - 10.1109/ISQED.2016.7479195
DO - 10.1109/ISQED.2016.7479195
M3 - Conference contribution
AN - SCOPUS:84973862299
T3 - Proceedings - International Symposium on Quality Electronic Design, ISQED
SP - 169
EP - 172
BT - Proceedings of the 17th International Symposium on Quality Electronic Design, ISQED 2016
PB - IEEE Computer Society
T2 - 17th International Symposium on Quality Electronic Design, ISQED 2016
Y2 - 15 March 2016 through 16 March 2016
ER -