Performance improved by point-contact electrodes and SiO2/SiNX layers at rear

Sheng Shih Wang; Jyh Jier Ho; Duo Sheng Chen; Jia Show Ho; Chen Hsun Du; Song Yeu Tsai; Hsien Seng Hung; Kang L. Wang

doi:10.1049/el.2014.1084

Performance improved by point-contact electrodes and SiO₂/SiN_X layers at rear

Sheng Shih Wang, Jyh Jier Ho, Duo Sheng Chen, Jia Show Ho, Chen Hsun Du, Song Yeu Tsai, Hsien Seng Hung, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The rear point-contact fabricated through the laser-opening technique for mass production was applied on the photovoltaic cells. Laser opening, different layers for passivation (SiO₂) and protection (SiN_X) were employed to investigate their impact on the performances of solar cells. The SiN_X layer protects the SiO₂ layer from being burnt through by aluminium paste at the co-firing step. A conversion efficiency (η) of 16.91% with an open-circuit voltage of 628 mV was obtained for the optimal cell, a stack structure with SiO₂ and SiN_X layers, which also achieves a lower contact resistance of 6.66 mΩ·cm² and a higher light-beam-induced current of 80.77 mA/cm². The optimal cell also showed longer lifetime and 3-4% increased quantum efficiency in the visible wavelength range. Therefore, the developed process has simplicity and reliability, is fast and cost-effective and could be applied to industrial applications.

Original language	English
Pages (from-to)	1736-1738
Number of pages	3
Journal	Electronics Letters
Volume	50
Issue number	23
DOIs	https://doi.org/10.1049/el.2014.1084
Publication status	Published - 2014 Nov 6

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el.2014.1084

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@article{573afb2608ad4f0ab4b4a4def311a253,

title = "Performance improved by point-contact electrodes and SiO2/SiNX layers at rear",

abstract = "The rear point-contact fabricated through the laser-opening technique for mass production was applied on the photovoltaic cells. Laser opening, different layers for passivation (SiO2) and protection (SiNX) were employed to investigate their impact on the performances of solar cells. The SiNX layer protects the SiO2 layer from being burnt through by aluminium paste at the co-firing step. A conversion efficiency (η) of 16.91% with an open-circuit voltage of 628 mV was obtained for the optimal cell, a stack structure with SiO2 and SiNX layers, which also achieves a lower contact resistance of 6.66 mΩ·cm2 and a higher light-beam-induced current of 80.77 mA/cm2. The optimal cell also showed longer lifetime and 3-4% increased quantum efficiency in the visible wavelength range. Therefore, the developed process has simplicity and reliability, is fast and cost-effective and could be applied to industrial applications.",

author = "Wang, {Sheng Shih} and Ho, {Jyh Jier} and Chen, {Duo Sheng} and Ho, {Jia Show} and Du, {Chen Hsun} and Tsai, {Song Yeu} and Hung, {Hsien Seng} and Wang, {Kang L.}",

note = "Publisher Copyright: {\textcopyright} The Institution of Engineering and Technology 2014.",

year = "2014",

month = nov,

day = "6",

doi = "10.1049/el.2014.1084",

language = "English",

volume = "50",

pages = "1736--1738",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "23",

}

TY - JOUR

T1 - Performance improved by point-contact electrodes and SiO2/SiNX layers at rear

AU - Wang, Sheng Shih

AU - Ho, Jyh Jier

AU - Chen, Duo Sheng

AU - Ho, Jia Show

AU - Du, Chen Hsun

AU - Tsai, Song Yeu

AU - Hung, Hsien Seng

AU - Wang, Kang L.

PY - 2014/11/6

Y1 - 2014/11/6

N2 - The rear point-contact fabricated through the laser-opening technique for mass production was applied on the photovoltaic cells. Laser opening, different layers for passivation (SiO2) and protection (SiNX) were employed to investigate their impact on the performances of solar cells. The SiNX layer protects the SiO2 layer from being burnt through by aluminium paste at the co-firing step. A conversion efficiency (η) of 16.91% with an open-circuit voltage of 628 mV was obtained for the optimal cell, a stack structure with SiO2 and SiNX layers, which also achieves a lower contact resistance of 6.66 mΩ·cm2 and a higher light-beam-induced current of 80.77 mA/cm2. The optimal cell also showed longer lifetime and 3-4% increased quantum efficiency in the visible wavelength range. Therefore, the developed process has simplicity and reliability, is fast and cost-effective and could be applied to industrial applications.

AB - The rear point-contact fabricated through the laser-opening technique for mass production was applied on the photovoltaic cells. Laser opening, different layers for passivation (SiO2) and protection (SiNX) were employed to investigate their impact on the performances of solar cells. The SiNX layer protects the SiO2 layer from being burnt through by aluminium paste at the co-firing step. A conversion efficiency (η) of 16.91% with an open-circuit voltage of 628 mV was obtained for the optimal cell, a stack structure with SiO2 and SiNX layers, which also achieves a lower contact resistance of 6.66 mΩ·cm2 and a higher light-beam-induced current of 80.77 mA/cm2. The optimal cell also showed longer lifetime and 3-4% increased quantum efficiency in the visible wavelength range. Therefore, the developed process has simplicity and reliability, is fast and cost-effective and could be applied to industrial applications.

UR - http://www.scopus.com/inward/record.url?scp=84912124089&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84912124089&partnerID=8YFLogxK

U2 - 10.1049/el.2014.1084

DO - 10.1049/el.2014.1084

M3 - Article

AN - SCOPUS:84912124089

SN - 0013-5194

VL - 50

SP - 1736

EP - 1738

JO - Electronics Letters

JF - Electronics Letters

IS - 23

ER -

Performance improved by point-contact electrodes and SiO₂/SiN_X layers at rear

Abstract

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