Performance improved by point-contact electrodes and SiO2/SiNX layers at rear

Sheng Shih Wang, Jyh Jier Ho, Duo Sheng Chen, Jia Show Ho, Chen Hsun Du, Song Yeu Tsai, Hsien Seng Hung, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The rear point-contact fabricated through the laser-opening technique for mass production was applied on the photovoltaic cells. Laser opening, different layers for passivation (SiO2) and protection (SiNX) were employed to investigate their impact on the performances of solar cells. The SiNX layer protects the SiO2 layer from being burnt through by aluminium paste at the co-firing step. A conversion efficiency (η) of 16.91% with an open-circuit voltage of 628 mV was obtained for the optimal cell, a stack structure with SiO2 and SiNX layers, which also achieves a lower contact resistance of 6.66 mΩ·cm2 and a higher light-beam-induced current of 80.77 mA/cm2. The optimal cell also showed longer lifetime and 3-4% increased quantum efficiency in the visible wavelength range. Therefore, the developed process has simplicity and reliability, is fast and cost-effective and could be applied to industrial applications.

Original languageEnglish
Pages (from-to)1736-1738
Number of pages3
JournalElectronics Letters
Volume50
Issue number23
DOIs
Publication statusPublished - 2014 Nov 6

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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