Abstract
The electrical and optical performances of multiple-quantum-well (MQW) InGaNGaN light-emitting diodes (LEDs) were improved by using chlorine to treat the surface of the p-type GaN layer. The chlorine was produced from electrolyzing diluted HCl(aq). The chlorine reacted with the p-type GaN surface and induced Ga vacancies in the surface region. The specific contact resistance of 4.8× 10-6 Ω cm2 was obtained for NiAu metals contact with the chlorine-treated p-type GaN due to the creation of more hole carriers via the inducement of Ga vacancies. Compared with the untreated LEDs, the current-voltage (I-V) characteristics showed that the forward voltage of the chlorine-treated MQW InGaNGaN LEDs decreased from 3.3 to 3.0 V at a driving current of 20 mA, and the light output power increases 1.25 times at 300 mA. The reverse leakage current of the chlorine-treated MQW InGaNGaN LEDs was also significantly decreased due to the passivation of surface states by chlorination treatment of p-type GaN layer.
Original language | English |
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Pages (from-to) | 165-167 |
Number of pages | 3 |
Journal | Electrochemical and Solid-State Letters |
Volume | 10 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2007 |
All Science Journal Classification (ASJC) codes
- General Chemical Engineering
- General Materials Science
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering