Performance improvement and mechanism of chlorine-treated InGaN-GaN light-emitting diodes

Po Sung Chen, Chi Sen Lee, Jheng Tai Yan, Ching Ting Lee

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8 Citations (Scopus)


The electrical and optical performances of multiple-quantum-well (MQW) InGaNGaN light-emitting diodes (LEDs) were improved by using chlorine to treat the surface of the p-type GaN layer. The chlorine was produced from electrolyzing diluted HCl(aq). The chlorine reacted with the p-type GaN surface and induced Ga vacancies in the surface region. The specific contact resistance of 4.8× 10-6 Ω cm2 was obtained for NiAu metals contact with the chlorine-treated p-type GaN due to the creation of more hole carriers via the inducement of Ga vacancies. Compared with the untreated LEDs, the current-voltage (I-V) characteristics showed that the forward voltage of the chlorine-treated MQW InGaNGaN LEDs decreased from 3.3 to 3.0 V at a driving current of 20 mA, and the light output power increases 1.25 times at 300 mA. The reverse leakage current of the chlorine-treated MQW InGaNGaN LEDs was also significantly decreased due to the passivation of surface states by chlorination treatment of p-type GaN layer.

Original languageEnglish
Pages (from-to)165-167
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number6
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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