Performance improvement and mechanism of chlorine-treated InGaN-GaN light-emitting diodes

Po Sung Chen, Chi Sen Lee, Jheng Tai Yan, Ching Ting Lee

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The electrical and optical performances of multiple-quantum-well (MQW) InGaNGaN light-emitting diodes (LEDs) were improved by using chlorine to treat the surface of the p-type GaN layer. The chlorine was produced from electrolyzing diluted HCl(aq). The chlorine reacted with the p-type GaN surface and induced Ga vacancies in the surface region. The specific contact resistance of 4.8× 10-6 Ω cm2 was obtained for NiAu metals contact with the chlorine-treated p-type GaN due to the creation of more hole carriers via the inducement of Ga vacancies. Compared with the untreated LEDs, the current-voltage (I-V) characteristics showed that the forward voltage of the chlorine-treated MQW InGaNGaN LEDs decreased from 3.3 to 3.0 V at a driving current of 20 mA, and the light output power increases 1.25 times at 300 mA. The reverse leakage current of the chlorine-treated MQW InGaNGaN LEDs was also significantly decreased due to the passivation of surface states by chlorination treatment of p-type GaN layer.

Original languageEnglish
Pages (from-to)165-167
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume10
Issue number6
DOIs
Publication statusPublished - 2007 Apr 13

Fingerprint

Chlorine
Light emitting diodes
chlorine
light emitting diodes
Semiconductor quantum wells
quantum wells
Vacancies
chlorination
Chlorination
Surface states
Electric potential
electric potential
Contact resistance
contact resistance
Passivation
Leakage currents
passivity
electric contacts
leakage
Metals

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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title = "Performance improvement and mechanism of chlorine-treated InGaN-GaN light-emitting diodes",
abstract = "The electrical and optical performances of multiple-quantum-well (MQW) InGaNGaN light-emitting diodes (LEDs) were improved by using chlorine to treat the surface of the p-type GaN layer. The chlorine was produced from electrolyzing diluted HCl(aq). The chlorine reacted with the p-type GaN surface and induced Ga vacancies in the surface region. The specific contact resistance of 4.8× 10-6 Ω cm2 was obtained for NiAu metals contact with the chlorine-treated p-type GaN due to the creation of more hole carriers via the inducement of Ga vacancies. Compared with the untreated LEDs, the current-voltage (I-V) characteristics showed that the forward voltage of the chlorine-treated MQW InGaNGaN LEDs decreased from 3.3 to 3.0 V at a driving current of 20 mA, and the light output power increases 1.25 times at 300 mA. The reverse leakage current of the chlorine-treated MQW InGaNGaN LEDs was also significantly decreased due to the passivation of surface states by chlorination treatment of p-type GaN layer.",
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Performance improvement and mechanism of chlorine-treated InGaN-GaN light-emitting diodes. / Chen, Po Sung; Lee, Chi Sen; Yan, Jheng Tai; Lee, Ching Ting.

In: Electrochemical and Solid-State Letters, Vol. 10, No. 6, 13.04.2007, p. 165-167.

Research output: Contribution to journalArticle

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AB - The electrical and optical performances of multiple-quantum-well (MQW) InGaNGaN light-emitting diodes (LEDs) were improved by using chlorine to treat the surface of the p-type GaN layer. The chlorine was produced from electrolyzing diluted HCl(aq). The chlorine reacted with the p-type GaN surface and induced Ga vacancies in the surface region. The specific contact resistance of 4.8× 10-6 Ω cm2 was obtained for NiAu metals contact with the chlorine-treated p-type GaN due to the creation of more hole carriers via the inducement of Ga vacancies. Compared with the untreated LEDs, the current-voltage (I-V) characteristics showed that the forward voltage of the chlorine-treated MQW InGaNGaN LEDs decreased from 3.3 to 3.0 V at a driving current of 20 mA, and the light output power increases 1.25 times at 300 mA. The reverse leakage current of the chlorine-treated MQW InGaNGaN LEDs was also significantly decreased due to the passivation of surface states by chlorination treatment of p-type GaN layer.

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