Performance improvement in tensile-strained In0.5 Al0.5As/InxGa1-xAs/ In0.5Al0.5As metamorphic HEMT

Wei Chou Hsu; Dong Hai Huang; Yu Shyan Lin; Yeong Jia Chen; Jun Chin Huang; Chang Luen Wu

doi:10.1109/TED.2005.863545

Performance improvement in tensile-strained In_0.5 Al_0.5As/In_xGa_1-xAs/ In_0.5Al_0.5As metamorphic HEMT

Wei Chou Hsu, Dong Hai Huang, Yu Shyan Lin, Yeong Jia Chen, Jun Chin Huang, Chang Luen Wu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

This paper proposes a In_0.5Al_0.5As/In_x Ga_1-xAs/In_0.5Al_0.5As (x= 0.3 - 0.5 - 0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.

Original language	English
Pages (from-to)	406-412
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	3
DOIs	https://doi.org/10.1109/TED.2005.863545
Publication status	Published - 2006 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2005.863545

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title = "Performance improvement in tensile-strained In0.5 Al0.5As/InxGa1-xAs/ In0.5Al0.5As metamorphic HEMT",

abstract = "This paper proposes a In0.5Al0.5As/Inx Ga1-xAs/In0.5Al0.5As (x= 0.3 - 0.5 - 0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.",

author = "Hsu, {Wei Chou} and Huang, {Dong Hai} and Lin, {Yu Shyan} and Chen, {Yeong Jia} and Huang, {Jun Chin} and Wu, {Chang Luen}",

note = "Funding Information: Manuscript received June 20, 2005; revised November 22, 2005. This work was supported by the National Science Council, China, under Contract NSC 93-2215-E-006-007 and Contract NSC 93-2215-E-259-005. The review of this paper was arranged by Editor C.-P. Lee. W.-C. Hsu, D.-H. Huang, Y.-J. Chen, and J.-C. Huang are with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 70101, Taiwan, R.O.C. (e-mail: [email protected]). Y.-S. Lin is with the Department of Materials Science and Engineering, National Dong-Hwa University, Hualien 97401, Taiwan, R.O.C. C.-L. Wu is with Transcom, Inc., Hsinshi 744, Taiwan, R.O.C. Digital Object Identifier 10.1109/TED.2005.863545",

year = "2006",

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doi = "10.1109/TED.2005.863545",

language = "English",

volume = "53",

pages = "406--412",

journal = "IEEE Transactions on Electron Devices",

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AU - Hsu, Wei Chou

AU - Huang, Dong Hai

AU - Lin, Yu Shyan

AU - Chen, Yeong Jia

AU - Huang, Jun Chin

AU - Wu, Chang Luen

N1 - Funding Information: Manuscript received June 20, 2005; revised November 22, 2005. This work was supported by the National Science Council, China, under Contract NSC 93-2215-E-006-007 and Contract NSC 93-2215-E-259-005. The review of this paper was arranged by Editor C.-P. Lee. W.-C. Hsu, D.-H. Huang, Y.-J. Chen, and J.-C. Huang are with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 70101, Taiwan, R.O.C. (e-mail: [email protected]). Y.-S. Lin is with the Department of Materials Science and Engineering, National Dong-Hwa University, Hualien 97401, Taiwan, R.O.C. C.-L. Wu is with Transcom, Inc., Hsinshi 744, Taiwan, R.O.C. Digital Object Identifier 10.1109/TED.2005.863545

PY - 2006/3

Y1 - 2006/3

N2 - This paper proposes a In0.5Al0.5As/Inx Ga1-xAs/In0.5Al0.5As (x= 0.3 - 0.5 - 0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.

AB - This paper proposes a In0.5Al0.5As/Inx Ga1-xAs/In0.5Al0.5As (x= 0.3 - 0.5 - 0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.

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Performance improvement in tensile-strained In_0.5 Al_0.5As/In_xGa_1-xAs/ In_0.5Al_0.5As metamorphic HEMT

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