This paper proposes a In0.5Al0.5As/Inx Ga1-xAs/In0.5Al0.5As (x= 0.3 - 0.5 - 0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering