Performance improvement in tensile-strained In0.5 Al0.5As/InxGa1-xAs/ In0.5Al0.5As metamorphic HEMT

Wei Chou Hsu, Dong Hai Huang, Yu Shyan Lin, Yeong Jia Chen, Jun Chin Huang, Chang Luen Wu

Research output: Contribution to journalArticle

26 Citations (Scopus)


This paper proposes a In0.5Al0.5As/Inx Ga1-xAs/In0.5Al0.5As (x= 0.3 - 0.5 - 0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.

Original languageEnglish
Pages (from-to)406-412
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number3
Publication statusPublished - 2006 Mar 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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