Performance Improvement of Co-Sputtering AlGaZnO Solar-Blind Photodetectors

Shu Bai Liu; Chia Hsun Chen; Sheng Po Chang; Chen Hao Li; Shoou Jinn Chang

doi:10.1109/JSEN.2021.3089508

Performance Improvement of Co-Sputtering AlGaZnO Solar-Blind Photodetectors

Shu Bai Liu, Chia Hsun Chen, Sheng Po Chang, Chen Hao Li, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The author reported the AlGaZnO photodetector characteristics with various AGO:ZnO co-sputtering power ratio. It was found the optimized on/off ratio and responsivity were about 3.64 × 10{5} and 0.15 A/W, respectively, at the 10 V applied bias, and with AGO:ZnO power ratio of 80 W:50 W. The UV to visible rejection ratio was 8.08 × 10{3} , indicated the significant response under UV illumination. The on/off ratio and responsivity could further be improved to 4.2 × 10{6} and 0.44 A/W, respectively, by annealed at 300°C for an hour, to decrease the defect in the AGZO film. Besides, the photoresponse of the AGZO photodetectors also showed a repeatable and stable switching characteristic. These results indicate the performance of AGZO photodetector were good, and can be a good candidate for low cost, fast fabricated solar-blind application.

Original language	English
Article number	9455387
Pages (from-to)	18682-18687
Number of pages	6
Journal	IEEE Sensors Journal
Volume	21
Issue number	17
DOIs	https://doi.org/10.1109/JSEN.2021.3089508
Publication status	Published - 2021 Sept 1

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

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title = "Performance Improvement of Co-Sputtering AlGaZnO Solar-Blind Photodetectors",

abstract = "The author reported the AlGaZnO photodetector characteristics with various AGO:ZnO co-sputtering power ratio. It was found the optimized on/off ratio and responsivity were about 3.64 × 10{5} and 0.15 A/W, respectively, at the 10 V applied bias, and with AGO:ZnO power ratio of 80 W:50 W. The UV to visible rejection ratio was 8.08 × 10{3} , indicated the significant response under UV illumination. The on/off ratio and responsivity could further be improved to 4.2 × 10{6} and 0.44 A/W, respectively, by annealed at 300°C for an hour, to decrease the defect in the AGZO film. Besides, the photoresponse of the AGZO photodetectors also showed a repeatable and stable switching characteristic. These results indicate the performance of AGZO photodetector were good, and can be a good candidate for low cost, fast fabricated solar-blind application.",

author = "Liu, {Shu Bai} and Chen, {Chia Hsun} and Chang, {Sheng Po} and Li, {Chen Hao} and Chang, {Shoou Jinn}",

note = "Publisher Copyright: {\textcopyright} 2001-2012 IEEE.",

year = "2021",

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doi = "10.1109/JSEN.2021.3089508",

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AU - Liu, Shu Bai

AU - Chen, Chia Hsun

AU - Chang, Sheng Po

AU - Li, Chen Hao

AU - Chang, Shoou Jinn

PY - 2021/9/1

Y1 - 2021/9/1

N2 - The author reported the AlGaZnO photodetector characteristics with various AGO:ZnO co-sputtering power ratio. It was found the optimized on/off ratio and responsivity were about 3.64 × 10{5} and 0.15 A/W, respectively, at the 10 V applied bias, and with AGO:ZnO power ratio of 80 W:50 W. The UV to visible rejection ratio was 8.08 × 10{3} , indicated the significant response under UV illumination. The on/off ratio and responsivity could further be improved to 4.2 × 10{6} and 0.44 A/W, respectively, by annealed at 300°C for an hour, to decrease the defect in the AGZO film. Besides, the photoresponse of the AGZO photodetectors also showed a repeatable and stable switching characteristic. These results indicate the performance of AGZO photodetector were good, and can be a good candidate for low cost, fast fabricated solar-blind application.

AB - The author reported the AlGaZnO photodetector characteristics with various AGO:ZnO co-sputtering power ratio. It was found the optimized on/off ratio and responsivity were about 3.64 × 10{5} and 0.15 A/W, respectively, at the 10 V applied bias, and with AGO:ZnO power ratio of 80 W:50 W. The UV to visible rejection ratio was 8.08 × 10{3} , indicated the significant response under UV illumination. The on/off ratio and responsivity could further be improved to 4.2 × 10{6} and 0.44 A/W, respectively, by annealed at 300°C for an hour, to decrease the defect in the AGZO film. Besides, the photoresponse of the AGZO photodetectors also showed a repeatable and stable switching characteristic. These results indicate the performance of AGZO photodetector were good, and can be a good candidate for low cost, fast fabricated solar-blind application.

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Performance Improvement of Co-Sputtering AlGaZnO Solar-Blind Photodetectors

Abstract

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