Abstract
To improve the conversion efficiency of InGaP/InGaAs/Ge triple-junction solar cells, AuGeNi/Au nanomesh electrode structure and TiO2 nanostructured antireflection structure were designed and fabricated. Laser interference photolithography system was used to pattern 330-nm-wide nanomesh electrode structures with various AuGeNi/Au metal line intervals. Oblique evaporation method using electron beam evaporator was used to deposit TiO2 nanorod arrays with various periods. By using the AuGeNi/Au nanomesh electrode structure with metal line interval of 100 μm, the conversion efficiency of the InGaP/InGaAs/Ge triple-junction solar cells was improved to 35.25% compared with 30.84% of that with conventional bus-bar electrode structure. By using the TiO2 nanorod array with a period of 1.00 μm to replace the TiO2/SiO2 antireflection structure, the conversion efficiency was further improved from 35.25% to 37.00%.
| Original language | English |
|---|---|
| Pages (from-to) | 51-54 |
| Number of pages | 4 |
| Journal | Solar Energy |
| Volume | 188 |
| DOIs | |
| Publication status | Published - 2019 Aug 1 |
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All Science Journal Classification (ASJC) codes
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
Cite this
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Performance improvement of III–V compound solar cells using nanomesh electrode and nanostructured antireflection structures. / Jian, Li Yi; Wu, Chun Ning; Lee, Hsin Ying; Heo, Junseok; Lee, Ching Ting.
In: Solar Energy, Vol. 188, 01.08.2019, p. 51-54.Research output: Contribution to journal › Article
TY - JOUR
T1 - Performance improvement of III–V compound solar cells using nanomesh electrode and nanostructured antireflection structures
AU - Jian, Li Yi
AU - Wu, Chun Ning
AU - Lee, Hsin Ying
AU - Heo, Junseok
AU - Lee, Ching Ting
PY - 2019/8/1
Y1 - 2019/8/1
N2 - To improve the conversion efficiency of InGaP/InGaAs/Ge triple-junction solar cells, AuGeNi/Au nanomesh electrode structure and TiO2 nanostructured antireflection structure were designed and fabricated. Laser interference photolithography system was used to pattern 330-nm-wide nanomesh electrode structures with various AuGeNi/Au metal line intervals. Oblique evaporation method using electron beam evaporator was used to deposit TiO2 nanorod arrays with various periods. By using the AuGeNi/Au nanomesh electrode structure with metal line interval of 100 μm, the conversion efficiency of the InGaP/InGaAs/Ge triple-junction solar cells was improved to 35.25% compared with 30.84% of that with conventional bus-bar electrode structure. By using the TiO2 nanorod array with a period of 1.00 μm to replace the TiO2/SiO2 antireflection structure, the conversion efficiency was further improved from 35.25% to 37.00%.
AB - To improve the conversion efficiency of InGaP/InGaAs/Ge triple-junction solar cells, AuGeNi/Au nanomesh electrode structure and TiO2 nanostructured antireflection structure were designed and fabricated. Laser interference photolithography system was used to pattern 330-nm-wide nanomesh electrode structures with various AuGeNi/Au metal line intervals. Oblique evaporation method using electron beam evaporator was used to deposit TiO2 nanorod arrays with various periods. By using the AuGeNi/Au nanomesh electrode structure with metal line interval of 100 μm, the conversion efficiency of the InGaP/InGaAs/Ge triple-junction solar cells was improved to 35.25% compared with 30.84% of that with conventional bus-bar electrode structure. By using the TiO2 nanorod array with a period of 1.00 μm to replace the TiO2/SiO2 antireflection structure, the conversion efficiency was further improved from 35.25% to 37.00%.
UR - http://www.scopus.com/inward/record.url?scp=85066493731&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85066493731&partnerID=8YFLogxK
U2 - 10.1016/j.solener.2019.05.066
DO - 10.1016/j.solener.2019.05.066
M3 - Article
AN - SCOPUS:85066493731
VL - 188
SP - 51
EP - 54
JO - Solar Energy
JF - Solar Energy
SN - 0038-092X
ER -