Performance improvement of III–V compound solar cells using nanomesh electrode and nanostructured antireflection structures

Li Yi Jian, Chun Ning Wu, Hsin Ying Lee, Junseok Heo, Ching Ting Lee

Research output: Contribution to journalArticle

Abstract

To improve the conversion efficiency of InGaP/InGaAs/Ge triple-junction solar cells, AuGeNi/Au nanomesh electrode structure and TiO2 nanostructured antireflection structure were designed and fabricated. Laser interference photolithography system was used to pattern 330-nm-wide nanomesh electrode structures with various AuGeNi/Au metal line intervals. Oblique evaporation method using electron beam evaporator was used to deposit TiO2 nanorod arrays with various periods. By using the AuGeNi/Au nanomesh electrode structure with metal line interval of 100 μm, the conversion efficiency of the InGaP/InGaAs/Ge triple-junction solar cells was improved to 35.25% compared with 30.84% of that with conventional bus-bar electrode structure. By using the TiO2 nanorod array with a period of 1.00 μm to replace the TiO2/SiO2 antireflection structure, the conversion efficiency was further improved from 35.25% to 37.00%.

Original languageEnglish
Pages (from-to)51-54
Number of pages4
JournalSolar Energy
Volume188
DOIs
Publication statusPublished - 2019 Aug 1

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Solar cells
Conversion efficiency
Electrodes
Nanorods
Metals
Photolithography
Evaporators
Electron beams
Evaporation
Deposits
Lasers

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

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title = "Performance improvement of III–V compound solar cells using nanomesh electrode and nanostructured antireflection structures",
abstract = "To improve the conversion efficiency of InGaP/InGaAs/Ge triple-junction solar cells, AuGeNi/Au nanomesh electrode structure and TiO2 nanostructured antireflection structure were designed and fabricated. Laser interference photolithography system was used to pattern 330-nm-wide nanomesh electrode structures with various AuGeNi/Au metal line intervals. Oblique evaporation method using electron beam evaporator was used to deposit TiO2 nanorod arrays with various periods. By using the AuGeNi/Au nanomesh electrode structure with metal line interval of 100 μm, the conversion efficiency of the InGaP/InGaAs/Ge triple-junction solar cells was improved to 35.25{\%} compared with 30.84{\%} of that with conventional bus-bar electrode structure. By using the TiO2 nanorod array with a period of 1.00 μm to replace the TiO2/SiO2 antireflection structure, the conversion efficiency was further improved from 35.25{\%} to 37.00{\%}.",
author = "Jian, {Li Yi} and Wu, {Chun Ning} and Lee, {Hsin Ying} and Junseok Heo and Lee, {Ching Ting}",
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Performance improvement of III–V compound solar cells using nanomesh electrode and nanostructured antireflection structures. / Jian, Li Yi; Wu, Chun Ning; Lee, Hsin Ying; Heo, Junseok; Lee, Ching Ting.

In: Solar Energy, Vol. 188, 01.08.2019, p. 51-54.

Research output: Contribution to journalArticle

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T1 - Performance improvement of III–V compound solar cells using nanomesh electrode and nanostructured antireflection structures

AU - Jian, Li Yi

AU - Wu, Chun Ning

AU - Lee, Hsin Ying

AU - Heo, Junseok

AU - Lee, Ching Ting

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AB - To improve the conversion efficiency of InGaP/InGaAs/Ge triple-junction solar cells, AuGeNi/Au nanomesh electrode structure and TiO2 nanostructured antireflection structure were designed and fabricated. Laser interference photolithography system was used to pattern 330-nm-wide nanomesh electrode structures with various AuGeNi/Au metal line intervals. Oblique evaporation method using electron beam evaporator was used to deposit TiO2 nanorod arrays with various periods. By using the AuGeNi/Au nanomesh electrode structure with metal line interval of 100 μm, the conversion efficiency of the InGaP/InGaAs/Ge triple-junction solar cells was improved to 35.25% compared with 30.84% of that with conventional bus-bar electrode structure. By using the TiO2 nanorod array with a period of 1.00 μm to replace the TiO2/SiO2 antireflection structure, the conversion efficiency was further improved from 35.25% to 37.00%.

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