Performance improvement of III–V compound solar cells using nanomesh electrode and nanostructured antireflection structures

Li Yi Jian; Chun Ning Wu; Hsin Ying Lee; Junseok Heo; Ching Ting Lee

doi:10.1016/j.solener.2019.05.066

Performance improvement of III–V compound solar cells using nanomesh electrode and nanostructured antireflection structures

Li Yi Jian, Chun Ning Wu, Hsin Ying Lee, Junseok Heo, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

To improve the conversion efficiency of InGaP/InGaAs/Ge triple-junction solar cells, AuGeNi/Au nanomesh electrode structure and TiO₂ nanostructured antireflection structure were designed and fabricated. Laser interference photolithography system was used to pattern 330-nm-wide nanomesh electrode structures with various AuGeNi/Au metal line intervals. Oblique evaporation method using electron beam evaporator was used to deposit TiO₂ nanorod arrays with various periods. By using the AuGeNi/Au nanomesh electrode structure with metal line interval of 100 μm, the conversion efficiency of the InGaP/InGaAs/Ge triple-junction solar cells was improved to 35.25% compared with 30.84% of that with conventional bus-bar electrode structure. By using the TiO₂ nanorod array with a period of 1.00 μm to replace the TiO₂/SiO₂ antireflection structure, the conversion efficiency was further improved from 35.25% to 37.00%.

Original language	English
Pages (from-to)	51-54
Number of pages	4
Journal	Solar Energy
Volume	188
DOIs	https://doi.org/10.1016/j.solener.2019.05.066
Publication status	Published - 2019 Aug

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
Materials Science(all)

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@article{f577d3d493b246c8a845f46d34d529f2,

title = "Performance improvement of III–V compound solar cells using nanomesh electrode and nanostructured antireflection structures",

abstract = "To improve the conversion efficiency of InGaP/InGaAs/Ge triple-junction solar cells, AuGeNi/Au nanomesh electrode structure and TiO2 nanostructured antireflection structure were designed and fabricated. Laser interference photolithography system was used to pattern 330-nm-wide nanomesh electrode structures with various AuGeNi/Au metal line intervals. Oblique evaporation method using electron beam evaporator was used to deposit TiO2 nanorod arrays with various periods. By using the AuGeNi/Au nanomesh electrode structure with metal line interval of 100 μm, the conversion efficiency of the InGaP/InGaAs/Ge triple-junction solar cells was improved to 35.25% compared with 30.84% of that with conventional bus-bar electrode structure. By using the TiO2 nanorod array with a period of 1.00 μm to replace the TiO2/SiO2 antireflection structure, the conversion efficiency was further improved from 35.25% to 37.00%.",

author = "Jian, {Li Yi} and Wu, {Chun Ning} and Lee, {Hsin Ying} and Junseok Heo and Lee, {Ching Ting}",

note = "Funding Information: This work was supported from the Ministry of Science and Technology of the Republic of China under contract Nos. MOST 105-2221-E-006-199-MY3 and MOST 106-2923-E-155-001-MY2 , and from the framework international cooperation program managed by the National Research Foundation of Korea under NRF-2017K2A9A1A06057314 .",

year = "2019",

month = aug,

doi = "10.1016/j.solener.2019.05.066",

language = "English",

volume = "188",

pages = "51--54",

journal = "Solar Energy",

issn = "0038-092X",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Performance improvement of III–V compound solar cells using nanomesh electrode and nanostructured antireflection structures

AU - Jian, Li Yi

AU - Wu, Chun Ning

AU - Lee, Hsin Ying

AU - Heo, Junseok

AU - Lee, Ching Ting

N1 - Funding Information: This work was supported from the Ministry of Science and Technology of the Republic of China under contract Nos. MOST 105-2221-E-006-199-MY3 and MOST 106-2923-E-155-001-MY2 , and from the framework international cooperation program managed by the National Research Foundation of Korea under NRF-2017K2A9A1A06057314 .

PY - 2019/8

Y1 - 2019/8

N2 - To improve the conversion efficiency of InGaP/InGaAs/Ge triple-junction solar cells, AuGeNi/Au nanomesh electrode structure and TiO2 nanostructured antireflection structure were designed and fabricated. Laser interference photolithography system was used to pattern 330-nm-wide nanomesh electrode structures with various AuGeNi/Au metal line intervals. Oblique evaporation method using electron beam evaporator was used to deposit TiO2 nanorod arrays with various periods. By using the AuGeNi/Au nanomesh electrode structure with metal line interval of 100 μm, the conversion efficiency of the InGaP/InGaAs/Ge triple-junction solar cells was improved to 35.25% compared with 30.84% of that with conventional bus-bar electrode structure. By using the TiO2 nanorod array with a period of 1.00 μm to replace the TiO2/SiO2 antireflection structure, the conversion efficiency was further improved from 35.25% to 37.00%.

AB - To improve the conversion efficiency of InGaP/InGaAs/Ge triple-junction solar cells, AuGeNi/Au nanomesh electrode structure and TiO2 nanostructured antireflection structure were designed and fabricated. Laser interference photolithography system was used to pattern 330-nm-wide nanomesh electrode structures with various AuGeNi/Au metal line intervals. Oblique evaporation method using electron beam evaporator was used to deposit TiO2 nanorod arrays with various periods. By using the AuGeNi/Au nanomesh electrode structure with metal line interval of 100 μm, the conversion efficiency of the InGaP/InGaAs/Ge triple-junction solar cells was improved to 35.25% compared with 30.84% of that with conventional bus-bar electrode structure. By using the TiO2 nanorod array with a period of 1.00 μm to replace the TiO2/SiO2 antireflection structure, the conversion efficiency was further improved from 35.25% to 37.00%.

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