Performance improvement of InGaAsN/GaAs quantum well lasers by using trimethylantimony preflow

Hsin Chieh Yu, Cheng Tien Wan, Wei Cheng Chen, Wei Chou Hsu, Ke Hua Su, Chun Yuan Huang, Yan Kuin Su

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The performance characteristics of InGaAsN quantum well (QW) lasers with and without trimethylantimony (TMSb) preflow have been studied. The TMSb preflow before the growth of InGaAsN QWs can suppress the Al-contamination effect and decrease the threshold current density compared with conventional InGaAsN QW lasers without preflow. The photoluminescence (PL) intensity increased and linewidth decreased when TMSb flow rate increased. According to the atomic force microscopy (AFM) measurement, the surface roughness was also reduced significantly after TMSb treatment which manifested that the preflow prevented the Al and N precursors from reacting with each other and resulted in a higher optical quality in InGaAsN QWs.

Original languageEnglish
Article number012103
JournalApplied Physics Express
Volume4
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Performance improvement of InGaAsN/GaAs quantum well lasers by using trimethylantimony preflow'. Together they form a unique fingerprint.

Cite this