Performance improvement of microcrystalline p-SiC/i-Si/n-Si thin film solar cells by using laser-assisted plasma enhanced chemical vapor deposition

Hsin-Ying Lee, Ting Chun Wang, Chun Yen Tseng

Research output: Contribution to journalArticle

Abstract

The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO 2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD) system. According to the micro-Raman results, the i-Si films shifted from 482 cm -1 to 512 cm -1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD) results, the microcrystalline i-Si films with (111), (220), and (311) diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm 2 to 18.16 mA/cm 2 and from 6.89% to 8.58%, respectively.

Original languageEnglish
Article number795152
JournalInternational Journal of Photoenergy
Volume2014
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Plasma enhanced chemical vapor deposition
solar cells
vapor deposition
Lasers
thin films
lasers
hydrogen plasma
Carbon Monoxide
short circuit currents
diffraction
Short circuit currents
Conversion efficiency
Hydrogen
Solar cells
Current density
Diffraction
current density
Crystalline materials
Plasmas
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

@article{ef986c067b204ae88fd07247ac0777f7,
title = "Performance improvement of microcrystalline p-SiC/i-Si/n-Si thin film solar cells by using laser-assisted plasma enhanced chemical vapor deposition",
abstract = "The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO 2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD) system. According to the micro-Raman results, the i-Si films shifted from 482 cm -1 to 512 cm -1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD) results, the microcrystalline i-Si films with (111), (220), and (311) diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm 2 to 18.16 mA/cm 2 and from 6.89{\%} to 8.58{\%}, respectively.",
author = "Hsin-Ying Lee and Wang, {Ting Chun} and Tseng, {Chun Yen}",
year = "2014",
month = "1",
day = "1",
doi = "10.1155/2014/795152",
language = "English",
volume = "2014",
journal = "International Journal of Photoenergy",
issn = "1110-662X",
publisher = "Hindawi Publishing Corporation",

}

TY - JOUR

T1 - Performance improvement of microcrystalline p-SiC/i-Si/n-Si thin film solar cells by using laser-assisted plasma enhanced chemical vapor deposition

AU - Lee, Hsin-Ying

AU - Wang, Ting Chun

AU - Tseng, Chun Yen

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO 2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD) system. According to the micro-Raman results, the i-Si films shifted from 482 cm -1 to 512 cm -1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD) results, the microcrystalline i-Si films with (111), (220), and (311) diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm 2 to 18.16 mA/cm 2 and from 6.89% to 8.58%, respectively.

AB - The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO 2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD) system. According to the micro-Raman results, the i-Si films shifted from 482 cm -1 to 512 cm -1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD) results, the microcrystalline i-Si films with (111), (220), and (311) diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm 2 to 18.16 mA/cm 2 and from 6.89% to 8.58%, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84901796435&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84901796435&partnerID=8YFLogxK

U2 - 10.1155/2014/795152

DO - 10.1155/2014/795152

M3 - Article

VL - 2014

JO - International Journal of Photoenergy

JF - International Journal of Photoenergy

SN - 1110-662X

M1 - 795152

ER -