TY - JOUR
T1 - Performance improvement of pentacene-doped P3HT:PCBM inverted polymer solar cells with AZO nanorod array passivated using photoelectrochemical technique
AU - Lee, Hsin Ying
AU - Huang, Hung Lin
N1 - Funding Information:
The authors gratefully acknowledge the support from the Bureau of Energy, Ministry of Economic Affairs of the Republic of China under contract no. TDPA 101-EC-17-A-08-S1-204 , the National Science Council of Taiwan, Republic of China under contract no. NSC 102-3113-P-492-002 , NSC 101-2628-E-006-017-MY3 .
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2014/7
Y1 - 2014/7
N2 - The pentacene-doped P3HT:PCBM inverted polymer solar cells (IPSCs) with Al-doped zinc oxide (AZO) nanorod array were fabricated. The AZO nanorod array could enhance the carrier collection and carrier extraction capability. The AZO nanorod array formed by the laser interference photolithography method and the wet etching process sequentially was used as the carrier collection and carrier transportation layers. The defects on the sidewall surface of the AZO nanorods were passivated by using the photoelectrochemical (PEC) method. It was demonstrated that the better performance of the IPSCs was obtained by PEC treatment. Compared with the IPSCs without PEC treatment, the short current density and power conversion efficiency of the IPSCs with PEC treatment for 60 s increased from 14.56 mA/cm2 to 15.85 mA/cm2 and 5.45% to 6.13%, respectively.
AB - The pentacene-doped P3HT:PCBM inverted polymer solar cells (IPSCs) with Al-doped zinc oxide (AZO) nanorod array were fabricated. The AZO nanorod array could enhance the carrier collection and carrier extraction capability. The AZO nanorod array formed by the laser interference photolithography method and the wet etching process sequentially was used as the carrier collection and carrier transportation layers. The defects on the sidewall surface of the AZO nanorods were passivated by using the photoelectrochemical (PEC) method. It was demonstrated that the better performance of the IPSCs was obtained by PEC treatment. Compared with the IPSCs without PEC treatment, the short current density and power conversion efficiency of the IPSCs with PEC treatment for 60 s increased from 14.56 mA/cm2 to 15.85 mA/cm2 and 5.45% to 6.13%, respectively.
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U2 - 10.1016/j.orgel.2014.04.001
DO - 10.1016/j.orgel.2014.04.001
M3 - Article
AN - SCOPUS:84899501639
VL - 15
SP - 1362
EP - 1367
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
IS - 7
ER -