Performance improvement of Y-doped VOx microbolometers with nanomesh antireflection layer

Tsung Han Yeh; Cheng Kang Tsai; Shao Yu Chu; Hsin Ying Lee; Ching Ting Lee

doi:10.1364/OE.386438

Performance improvement of Y-doped VOx microbolometers with nanomesh antireflection layer

Tsung Han Yeh, Cheng Kang Tsai, Shao Yu Chu, Hsin Ying Lee, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

In the study, the yttrium (Y)-doped vanadium oxide (VOx:Y) films used as the sensitive layers of microbolometers were deposited using a radio frequency magnetron cosputtering system. The temperature coefficient of resistance (TCR) of the VOx:Y films was enhanced from 1.88%/°C to 2.85%/°C in comparison with that of the VOx films. To further improve the performance of microbolometers, the nanomesh antireflection layer was placed on the top surface of the microbolometers to reduce the infrared reflection. The responsivity, thermal time constant, thermal conductivity, absorptance, and detectivity of the VOx:Y microbolometers with nanomesh antireflection layer were 931.89-48 kV/W, 4.48 ms, 6.19-108 W/K, 74.41% and 2.20-108 cmHz0.5W1, respectively.

Original language	English
Pages (from-to)	6433-6442
Number of pages	10
Journal	Optics Express
Volume	28
Issue number	5
DOIs	https://doi.org/10.1364/OE.386438
Publication status	Published - 2020 Mar 2

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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10.1364/OE.386438

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title = "Performance improvement of Y-doped VOx microbolometers with nanomesh antireflection layer",

abstract = "In the study, the yttrium (Y)-doped vanadium oxide (VOx:Y) films used as the sensitive layers of microbolometers were deposited using a radio frequency magnetron cosputtering system. The temperature coefficient of resistance (TCR) of the VOx:Y films was enhanced from 1.88%/°C to 2.85%/°C in comparison with that of the VOx films. To further improve the performance of microbolometers, the nanomesh antireflection layer was placed on the top surface of the microbolometers to reduce the infrared reflection. The responsivity, thermal time constant, thermal conductivity, absorptance, and detectivity of the VOx:Y microbolometers with nanomesh antireflection layer were 931.89-48 kV/W, 4.48 ms, 6.19-108 W/K, 74.41% and 2.20-108 cmHz0.5W1, respectively.",

author = "Yeh, {Tsung Han} and Tsai, {Cheng Kang} and Chu, {Shao Yu} and Lee, {Hsin Ying} and Lee, {Ching Ting}",

note = "Funding Information: We gratefully acknowledge the Taiwan Semiconductor Research Institute and National Chung-Shan Institute of Science & Technology for their support. Publisher Copyright: {\textcopyright} 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.",

year = "2020",

month = mar,

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doi = "10.1364/OE.386438",

language = "English",

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AU - Yeh, Tsung Han

AU - Tsai, Cheng Kang

AU - Chu, Shao Yu

AU - Lee, Hsin Ying

AU - Lee, Ching Ting

N1 - Funding Information: We gratefully acknowledge the Taiwan Semiconductor Research Institute and National Chung-Shan Institute of Science & Technology for their support. Publisher Copyright: © 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.

PY - 2020/3/2

Y1 - 2020/3/2

N2 - In the study, the yttrium (Y)-doped vanadium oxide (VOx:Y) films used as the sensitive layers of microbolometers were deposited using a radio frequency magnetron cosputtering system. The temperature coefficient of resistance (TCR) of the VOx:Y films was enhanced from 1.88%/°C to 2.85%/°C in comparison with that of the VOx films. To further improve the performance of microbolometers, the nanomesh antireflection layer was placed on the top surface of the microbolometers to reduce the infrared reflection. The responsivity, thermal time constant, thermal conductivity, absorptance, and detectivity of the VOx:Y microbolometers with nanomesh antireflection layer were 931.89-48 kV/W, 4.48 ms, 6.19-108 W/K, 74.41% and 2.20-108 cmHz0.5W1, respectively.

AB - In the study, the yttrium (Y)-doped vanadium oxide (VOx:Y) films used as the sensitive layers of microbolometers were deposited using a radio frequency magnetron cosputtering system. The temperature coefficient of resistance (TCR) of the VOx:Y films was enhanced from 1.88%/°C to 2.85%/°C in comparison with that of the VOx films. To further improve the performance of microbolometers, the nanomesh antireflection layer was placed on the top surface of the microbolometers to reduce the infrared reflection. The responsivity, thermal time constant, thermal conductivity, absorptance, and detectivity of the VOx:Y microbolometers with nanomesh antireflection layer were 931.89-48 kV/W, 4.48 ms, 6.19-108 W/K, 74.41% and 2.20-108 cmHz0.5W1, respectively.

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Performance improvement of Y-doped VOx microbolometers with nanomesh antireflection layer

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