Performance investigation of GaN-based lightemitting diodes with tiny misorientation of sapphire substrates

Yi Jung Liu; Tsung Yuan Tsai; Chih Hung Yen; Li Yang Chen; Tsung Han Tsai; Chien Chang Huang; Tai You Chen; Chi Hsiang Hsu; Wen Chau Liu

doi:10.1364/OE.18.002729

Performance investigation of GaN-based lightemitting diodes with tiny misorientation of sapphire substrates

Yi Jung Liu
, Tsung Yuan Tsai
, Chih Hung Yen
, Li Yang Chen
, Tsung Han Tsai
, Chien Chang Huang
, Tai You Chen
, Chi Hsiang Hsu
, Wen Chau Liu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. Based on the material quality and electrical properties, the LED with a 0.2° tilt sapphire substrate (device A) exhibits the lowest defect density and high performance, while the LED with a 1.0° tilt sapphire (device D) exhibits the highest one. At 2 mA, the extremely enhanced output power of 23.3% indicates of the reduction of defect-related nonradiative recombination centers in active layers for the device A. At 60 mA, the improved value is up to 45.7%. This is primarily caused by the formation of indium quantum dots in MQW which provides an increased quantum efficiency.

Original language	English
Pages (from-to)	2729-2742
Number of pages	14
Journal	Optics Express
Volume	18
Issue number	3
DOIs	https://doi.org/10.1364/OE.18.002729
Publication status	Published - 2010 Feb 1

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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10.1364/OE.18.002729

Cite this

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abstract = "GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. Based on the material quality and electrical properties, the LED with a 0.2° tilt sapphire substrate (device A) exhibits the lowest defect density and high performance, while the LED with a 1.0° tilt sapphire (device D) exhibits the highest one. At 2 mA, the extremely enhanced output power of 23.3\% indicates of the reduction of defect-related nonradiative recombination centers in active layers for the device A. At 60 mA, the improved value is up to 45.7\%. This is primarily caused by the formation of indium quantum dots in MQW which provides an increased quantum efficiency.",

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T1 - Performance investigation of GaN-based lightemitting diodes with tiny misorientation of sapphire substrates

AU - Liu, Yi Jung

AU - Tsai, Tsung Yuan

AU - Yen, Chih Hung

AU - Chen, Li Yang

AU - Tsai, Tsung Han

AU - Huang, Chien Chang

AU - Chen, Tai You

AU - Hsu, Chi Hsiang

AU - Liu, Wen Chau

PY - 2010/2/1

Y1 - 2010/2/1

N2 - GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. Based on the material quality and electrical properties, the LED with a 0.2° tilt sapphire substrate (device A) exhibits the lowest defect density and high performance, while the LED with a 1.0° tilt sapphire (device D) exhibits the highest one. At 2 mA, the extremely enhanced output power of 23.3% indicates of the reduction of defect-related nonradiative recombination centers in active layers for the device A. At 60 mA, the improved value is up to 45.7%. This is primarily caused by the formation of indium quantum dots in MQW which provides an increased quantum efficiency.

AB - GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. Based on the material quality and electrical properties, the LED with a 0.2° tilt sapphire substrate (device A) exhibits the lowest defect density and high performance, while the LED with a 1.0° tilt sapphire (device D) exhibits the highest one. At 2 mA, the extremely enhanced output power of 23.3% indicates of the reduction of defect-related nonradiative recombination centers in active layers for the device A. At 60 mA, the improved value is up to 45.7%. This is primarily caused by the formation of indium quantum dots in MQW which provides an increased quantum efficiency.

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JO - Optics Express

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IS - 3

ER -

Performance investigation of GaN-based lightemitting diodes with tiny misorientation of sapphire substrates

Abstract

All Science Journal Classification (ASJC) codes

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