Performance of a GaAs-based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated treated gate

Chien Chang Huang; Chun Chia Chen; Jian Kai Liou; Po Cheng Chou; Huey Ing Chen; Shiou Ying Cheng; Wen Chau Liu

doi:10.4028/www.scientific.net/MSF.694.891

Performance of a GaAs-based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated treated gate

Chien Chang Huang, Chun Chia Chen, Jian Kai Liou, Po Cheng Chou, Huey Ing Chen, Shiou Ying Cheng, Wen Chau Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An interesting GaAs based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated (EP) surface treated gate is fabricated and studied. Based on the low-temperature and low-energy deposition conditions, the EP approach can form better metal-semiconductor (M-S) interface with the reduction in surface thermal damages and disordered-states. The material analyses of EP approach, including Auger electron spectroscopy (AES) and scanning electron microscopic (SEM), are examined. The DC performance of EP-gate device is investigated. In addition, the temperature influences of the studied devices, at the temperature region of 300 to 500K, are studied. As compared with the conventional thermal evaporation (TE) approach, the EP-based device shows significantly improved DC characteristics over a wide temperature range (300-500K). Moreover, the EP approach also has advantages of easy operation and low cost.

Original language	English
Title of host publication	Frontier of Nanoscience and Technology
Publisher	Trans Tech Publications Ltd
Pages	891-895
Number of pages	5
ISBN (Print)	9783037852101
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.694.891
Publication status	Published - 2011

Publication series

Name	Materials Science Forum
Volume	694
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Huang, C. C., Chen, C. C., Liou, J. K., Chou, P. C., Chen, H. I., Cheng, S. Y., & Liu, W. C. (2011). Performance of a GaAs-based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated treated gate. In Frontier of Nanoscience and Technology (pp. 891-895). (Materials Science Forum; Vol. 694). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.694.891

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title = "Performance of a GaAs-based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated treated gate",

abstract = "An interesting GaAs based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated (EP) surface treated gate is fabricated and studied. Based on the low-temperature and low-energy deposition conditions, the EP approach can form better metal-semiconductor (M-S) interface with the reduction in surface thermal damages and disordered-states. The material analyses of EP approach, including Auger electron spectroscopy (AES) and scanning electron microscopic (SEM), are examined. The DC performance of EP-gate device is investigated. In addition, the temperature influences of the studied devices, at the temperature region of 300 to 500K, are studied. As compared with the conventional thermal evaporation (TE) approach, the EP-based device shows significantly improved DC characteristics over a wide temperature range (300-500K). Moreover, the EP approach also has advantages of easy operation and low cost.",

author = "Huang, {Chien Chang} and Chen, {Chun Chia} and Liou, {Jian Kai} and Chou, {Po Cheng} and Chen, {Huey Ing} and Cheng, {Shiou Ying} and Liu, {Wen Chau}",

year = "2011",

doi = "10.4028/www.scientific.net/MSF.694.891",

language = "English",

isbn = "9783037852101",

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publisher = "Trans Tech Publications Ltd",

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Huang, CC, Chen, CC, Liou, JK, Chou, PC, Chen, HI, Cheng, SY & Liu, WC 2011, Performance of a GaAs-based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated treated gate. in Frontier of Nanoscience and Technology. Materials Science Forum, vol. 694, Trans Tech Publications Ltd, pp. 891-895. https://doi.org/10.4028/www.scientific.net/MSF.694.891

Performance of a GaAs-based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated treated gate. / Huang, Chien Chang; Chen, Chun Chia; Liou, Jian Kai; Chou, Po Cheng; Chen, Huey Ing; Cheng, Shiou Ying; Liu, Wen Chau.

Frontier of Nanoscience and Technology. Trans Tech Publications Ltd, 2011. p. 891-895 (Materials Science Forum; Vol. 694).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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