Performance of a GaAs-based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated treated gate

Chien Chang Huang, Chun Chia Chen, Jian Kai Liou, Po Cheng Chou, Huey Ing Chen, Shiou Ying Cheng, Wen Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An interesting GaAs based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated (EP) surface treated gate is fabricated and studied. Based on the low-temperature and low-energy deposition conditions, the EP approach can form better metal-semiconductor (M-S) interface with the reduction in surface thermal damages and disordered-states. The material analyses of EP approach, including Auger electron spectroscopy (AES) and scanning electron microscopic (SEM), are examined. The DC performance of EP-gate device is investigated. In addition, the temperature influences of the studied devices, at the temperature region of 300 to 500K, are studied. As compared with the conventional thermal evaporation (TE) approach, the EP-based device shows significantly improved DC characteristics over a wide temperature range (300-500K). Moreover, the EP approach also has advantages of easy operation and low cost.

Original languageEnglish
Title of host publicationFrontier of Nanoscience and Technology
PublisherTrans Tech Publications Ltd
Pages891-895
Number of pages5
ISBN (Print)9783037852101
DOIs
Publication statusPublished - 2011 Jan 1

Publication series

NameMaterials Science Forum
Volume694
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Huang, C. C., Chen, C. C., Liou, J. K., Chou, P. C., Chen, H. I., Cheng, S. Y., & Liu, W. C. (2011). Performance of a GaAs-based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated treated gate. In Frontier of Nanoscience and Technology (pp. 891-895). (Materials Science Forum; Vol. 694). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.694.891