TY - GEN
T1 - Performance of a GaAs-based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated treated gate
AU - Huang, Chien Chang
AU - Chen, Chun Chia
AU - Liou, Jian Kai
AU - Chou, Po Cheng
AU - Chen, Huey Ing
AU - Cheng, Shiou Ying
AU - Liu, Wen Chau
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - An interesting GaAs based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated (EP) surface treated gate is fabricated and studied. Based on the low-temperature and low-energy deposition conditions, the EP approach can form better metal-semiconductor (M-S) interface with the reduction in surface thermal damages and disordered-states. The material analyses of EP approach, including Auger electron spectroscopy (AES) and scanning electron microscopic (SEM), are examined. The DC performance of EP-gate device is investigated. In addition, the temperature influences of the studied devices, at the temperature region of 300 to 500K, are studied. As compared with the conventional thermal evaporation (TE) approach, the EP-based device shows significantly improved DC characteristics over a wide temperature range (300-500K). Moreover, the EP approach also has advantages of easy operation and low cost.
AB - An interesting GaAs based pseudomorphic high electron mobility transistor (PHEMT) with an electroless-plated (EP) surface treated gate is fabricated and studied. Based on the low-temperature and low-energy deposition conditions, the EP approach can form better metal-semiconductor (M-S) interface with the reduction in surface thermal damages and disordered-states. The material analyses of EP approach, including Auger electron spectroscopy (AES) and scanning electron microscopic (SEM), are examined. The DC performance of EP-gate device is investigated. In addition, the temperature influences of the studied devices, at the temperature region of 300 to 500K, are studied. As compared with the conventional thermal evaporation (TE) approach, the EP-based device shows significantly improved DC characteristics over a wide temperature range (300-500K). Moreover, the EP approach also has advantages of easy operation and low cost.
UR - http://www.scopus.com/inward/record.url?scp=80052076608&partnerID=8YFLogxK
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U2 - 10.4028/www.scientific.net/MSF.694.891
DO - 10.4028/www.scientific.net/MSF.694.891
M3 - Conference contribution
AN - SCOPUS:80052076608
SN - 9783037852101
T3 - Materials Science Forum
SP - 891
EP - 895
BT - Frontier of Nanoscience and Technology
PB - Trans Tech Publications Ltd
ER -