TY - JOUR
T1 - Performance of a polymeric light-emitting diode (PLED) using a ZnO film as an anode electrode
AU - Lee, Yuhua
AU - Huang, S. H.
AU - Min, J. F.
AU - Lin, S. T.
AU - Chou, W. Y.
PY - 2008/8
Y1 - 2008/8
N2 - An ion-beam sputtering technique was utilized in ZnO film deposition, and small and large ion-beam currents (Ib) of 10 and 30 mA, respectively, were used with the ion-beam voltage (Vb) kept constant at 600 V. To control the thin film's stoichiometry and, thus, its resistivity, we employed different oxygen flow rates (r) of 0, 0.2, 0.4, 0.6 and 1 sccm. For both I b = 10 and 30 mA, the resistivity increased and the carrier concentration decreased with increasing oxygen flow rates. When the carrier concentration dropped below 1020 cm-3, the performance of the PLED was degraded, and no illumination was given off when the concentration reached ∼1017 cm-3. The best device performance observed for the films made with Ib = 10 mA and 30 mA corresponded, respectively, to no oxygen flow rate and a small (0.2 sccm) flow rate. These two films showed a luminance of ∼1600 cd/m2 at 10 V. The turn-on voltage was 3.0 V for Ib = 10 mA and 4.5 V for Ib = 30 mA.
AB - An ion-beam sputtering technique was utilized in ZnO film deposition, and small and large ion-beam currents (Ib) of 10 and 30 mA, respectively, were used with the ion-beam voltage (Vb) kept constant at 600 V. To control the thin film's stoichiometry and, thus, its resistivity, we employed different oxygen flow rates (r) of 0, 0.2, 0.4, 0.6 and 1 sccm. For both I b = 10 and 30 mA, the resistivity increased and the carrier concentration decreased with increasing oxygen flow rates. When the carrier concentration dropped below 1020 cm-3, the performance of the PLED was degraded, and no illumination was given off when the concentration reached ∼1017 cm-3. The best device performance observed for the films made with Ib = 10 mA and 30 mA corresponded, respectively, to no oxygen flow rate and a small (0.2 sccm) flow rate. These two films showed a luminance of ∼1600 cd/m2 at 10 V. The turn-on voltage was 3.0 V for Ib = 10 mA and 4.5 V for Ib = 30 mA.
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U2 - 10.3938/jkps.53.943
DO - 10.3938/jkps.53.943
M3 - Article
AN - SCOPUS:50949100942
SN - 0374-4884
VL - 53
SP - 943
EP - 948
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
IS - 2 PART 1
ER -