Performance of metamorphic transistors with δ-doped structures

Chien Chang Huang, Tai You Chen, Chi Shiang Hsu, Chun Chia Chen, Chung I. Kao, Wen-Chau Liu

Research output: Contribution to journalArticle

Abstract

The interesting dc, microwave, and power performance of double and single δ-doped metamorphic high electron mobility transistors (MHEMTs), grown by molecular beam epitaxy, are studied. Because of the use of a double δ-doped structure, the increase of carrier density and uniform distribution of carriers within the channel are found. Therefore, the superior characteristics in the drain saturation current of 544.4 (523.9) mA/mm, extrinsic transconductance of 361.2 (312.4) mS/mm, drain current operation region of 236.9 (227.4) mA/mm, unity current gain cutoff frequency of 55.1 GHz, maximum oscillation frequency of 129.17 GHz, output power of 15.35 dBm, power gain of 24.65 dB, and power added efficiency of 39.4% could be achieved for a 0.6 × 100 μm2 gate dimension MHEMT at 300 (510) K. With increasing the temperature from 300 to 510 K, the slight temperature variation rates are also found for the studied device with a double δ-doped structure.On the other hand, the kink effect and impact ionization for the studied device with a double δ-doped structure are considerably suppressed.

Original languageEnglish
Pages (from-to)13476-13479
Number of pages4
JournalJournal of Physical Chemistry C
Volume115
Issue number27
DOIs
Publication statusPublished - 2011 Jul 14

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

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    Huang, C. C., Chen, T. Y., Hsu, C. S., Chen, C. C., Kao, C. I., & Liu, W-C. (2011). Performance of metamorphic transistors with δ-doped structures. Journal of Physical Chemistry C, 115(27), 13476-13479. https://doi.org/10.1021/jp204203e