Performance of PLED with anode of transparent conductive ZnO x<1thin film made at low temperature

Yuhua Lee; S. H. Huang; J. F. Min; S. T. Lin; Wei-Yang Chou

Performance of PLED with anode of transparent conductive ZnO _x<1thin film made at low temperature

Yuhua Lee, S. H. Huang, J. F. Min, S. T. Lin, Wei-Yang Chou

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Zinc-oxide (ZnO) films with nominal thickness of 200 nm were made by a technique of ion-beam sputtering. Ion-beam currents (I_b) of 10, 20 and 30 mA were used for each beam voltage V_b = 400, 500, 600 and 700 V. All films as made are nonstoicheometric (ZnOx<1 ) and are optically transparent and electrically conductive. When films were applied to polymer light- emitting diodes device as anode contact, the device can be illuminated only for lb = 10 mA. The turn-on voltages (V_on) are ̃ 3 V for V_b = 400 V to 700 V. It is slightly larger than V_on ̃ 2.5 V of the commercial made 250 nm thick ITO film. The luminance decreases with the increase of V_b and is smaller than that of ITO. The luminance efficiency (i.e. luminance per unit current) is larger for ZnO.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings - Organic Thin-Film Electronics- Materials, Processes, and Applications
Pages	68-73
Number of pages	6
Publication status	Published - 2007 Dec 1
Event	Organic Thin-Film Electronics- Materials, Processes, and Applications - 2007 MRS Spring Meeting - San Francisco, CA, United States Duration: 2007 Apr 9 → 2007 Apr 13

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1003
ISSN (Print)	0272-9172

Other

Other	Organic Thin-Film Electronics- Materials, Processes, and Applications - 2007 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	07-04-09 → 07-04-13

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@inproceedings{18466137d7974dc193033a5b9ee55947,

title = "Performance of PLED with anode of transparent conductive ZnO x<1thin film made at low temperature",

abstract = "Zinc-oxide (ZnO) films with nominal thickness of 200 nm were made by a technique of ion-beam sputtering. Ion-beam currents (Ib) of 10, 20 and 30 mA were used for each beam voltage Vb = 400, 500, 600 and 700 V. All films as made are nonstoicheometric (ZnOx<1 ) and are optically transparent and electrically conductive. When films were applied to polymer light- emitting diodes device as anode contact, the device can be illuminated only for lb = 10 mA. The turn-on voltages (Von) are{\~ } 3 V for Vb = 400 V to 700 V. It is slightly larger than Von{\~ } 2.5 V of the commercial made 250 nm thick ITO film. The luminance decreases with the increase of Vb and is smaller than that of ITO. The luminance efficiency (i.e. luminance per unit current) is larger for ZnO.",

author = "Yuhua Lee and Huang, {S. H.} and Min, {J. F.} and Lin, {S. T.} and Wei-Yang Chou",

year = "2007",

month = dec,

day = "1",

language = "English",

isbn = "9781605604367",

series = "Materials Research Society Symposium Proceedings",

pages = "68--73",

booktitle = "Materials Research Society Symposium Proceedings - Organic Thin-Film Electronics- Materials, Processes, and Applications",

note = "Organic Thin-Film Electronics- Materials, Processes, and Applications - 2007 MRS Spring Meeting ; Conference date: 09-04-2007 Through 13-04-2007",

}

Lee, Y, Huang, SH, Min, JF, Lin, ST & Chou, W-Y 2007, Performance of PLED with anode of transparent conductive ZnO _x<1thin film made at low temperature. in Materials Research Society Symposium Proceedings - Organic Thin-Film Electronics- Materials, Processes, and Applications. Materials Research Society Symposium Proceedings, vol. 1003, pp. 68-73, Organic Thin-Film Electronics- Materials, Processes, and Applications - 2007 MRS Spring Meeting, San Francisco, CA, United States, 07-04-09.

Performance of PLED with anode of transparent conductive ZnO _x<1thin film made at low temperature. / Lee, Yuhua; Huang, S. H.; Min, J. F. et al.

Materials Research Society Symposium Proceedings - Organic Thin-Film Electronics- Materials, Processes, and Applications. 2007. p. 68-73 (Materials Research Society Symposium Proceedings; Vol. 1003).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Lee, Yuhua

AU - Huang, S. H.

AU - Min, J. F.

AU - Lin, S. T.

AU - Chou, Wei-Yang

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Zinc-oxide (ZnO) films with nominal thickness of 200 nm were made by a technique of ion-beam sputtering. Ion-beam currents (Ib) of 10, 20 and 30 mA were used for each beam voltage Vb = 400, 500, 600 and 700 V. All films as made are nonstoicheometric (ZnOx<1 ) and are optically transparent and electrically conductive. When films were applied to polymer light- emitting diodes device as anode contact, the device can be illuminated only for lb = 10 mA. The turn-on voltages (Von) are ̃ 3 V for Vb = 400 V to 700 V. It is slightly larger than Von ̃ 2.5 V of the commercial made 250 nm thick ITO film. The luminance decreases with the increase of Vb and is smaller than that of ITO. The luminance efficiency (i.e. luminance per unit current) is larger for ZnO.

AB - Zinc-oxide (ZnO) films with nominal thickness of 200 nm were made by a technique of ion-beam sputtering. Ion-beam currents (Ib) of 10, 20 and 30 mA were used for each beam voltage Vb = 400, 500, 600 and 700 V. All films as made are nonstoicheometric (ZnOx<1 ) and are optically transparent and electrically conductive. When films were applied to polymer light- emitting diodes device as anode contact, the device can be illuminated only for lb = 10 mA. The turn-on voltages (Von) are ̃ 3 V for Vb = 400 V to 700 V. It is slightly larger than Von ̃ 2.5 V of the commercial made 250 nm thick ITO film. The luminance decreases with the increase of Vb and is smaller than that of ITO. The luminance efficiency (i.e. luminance per unit current) is larger for ZnO.

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