Performance of PLED with anode of transparent conductive ZnO x<1thin film made at low temperature

Yuhua Lee, S. H. Huang, J. F. Min, S. T. Lin, W. Y. Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Zinc-oxide (ZnO) films with nominal thickness of 200 nm were made by a technique of ion-beam sputtering. Ion-beam currents (Ib) of 10, 20 and 30 mA were used for each beam voltage Vb = 400, 500, 600 and 700 V. All films as made are nonstoicheometric (ZnOx<1 ) and are optically transparent and electrically conductive. When films were applied to polymer light- emitting diodes device as anode contact, the device can be illuminated only for lb = 10 mA. The turn-on voltages (Von) are ̃ 3 V for Vb = 400 V to 700 V. It is slightly larger than Von ̃ 2.5 V of the commercial made 250 nm thick ITO film. The luminance decreases with the increase of Vb and is smaller than that of ITO. The luminance efficiency (i.e. luminance per unit current) is larger for ZnO.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Organic Thin-Film Electronics- Materials, Processes, and Applications
Pages68-73
Number of pages6
Publication statusPublished - 2007
EventOrganic Thin-Film Electronics- Materials, Processes, and Applications - 2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2007 Apr 92007 Apr 13

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1003
ISSN (Print)0272-9172

Other

OtherOrganic Thin-Film Electronics- Materials, Processes, and Applications - 2007 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period07-04-0907-04-13

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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