Performance on GaN-based light-emitting diodes with different substrate tilt angles

Jian Kai Liou, Yi Jing Liu, Shiou Ying Cheng, Po Cheng Chou, Chiun Chia Chen, Wen Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The electrostatic discharge (ESD) performance of GaN-based light-emitting diodes (LEDs) with naturally-textured p-GaN contact layers grown on c-axis miscut sapphire substrates are studied. During machine model tests, the device grown on a 0.35° miscut sapphire shows the highest ESD tolerance, while the one grown on a 0.2° miscut sapphire exhibits the poorest tolerance. It is discovered that this effect correlates with the presence of maximum capacitance (Cm) values, over the difference in defect densities between LEDs. The variation in Cm values is caused by parasitic capacitance effect induced by different p-GaN surface morphologies between the studied devices. This observation gives us more reliable application in improving ESD performance based on the device grown on a 0.35° miscut sapphire.

Original languageEnglish
Title of host publicationFrontier of Nanoscience and Technology
PublisherTrans Tech Publications Ltd
Pages842-846
Number of pages5
ISBN (Print)9783037852101
DOIs
Publication statusPublished - 2011

Publication series

NameMaterials Science Forum
Volume694
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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