Indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) with a co-sputtered tin indium gallium zinc oxide (SnInGaZnO) electron barrier layer (EBL) are fabricated. The effect of the SnInGaZnO layer thickness on device characteristics is investigated. With stacking a 250-nm-thick SnInGaZnO EBL in the source/drain region, it introduces an additional potential barrier of around 0.14 V to the channel carriers. Experimental results show that the turn-off voltage of TFTs increases from -0.5 V to about 0 V, the on/off current ratio increases from 1.9 × 105 to 1.9 × 106, and the subthreshold swing decreases from 0.13 V/dec to 0.073 V/dec.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)