Performance tuning of InGaZnO thin-film transistors with a SnInGaZnO electron barrier layer

Hau Yuan Huang; Shui Jinn Wang; Chien Hung Wu; Chen Kuo Chiang; Je Yi Su

doi:10.1063/1.4795127

Performance tuning of InGaZnO thin-film transistors with a SnInGaZnO electron barrier layer

Hau Yuan Huang
, Shui Jinn Wang
, Chien Hung Wu
, Chen Kuo Chiang
, Je Yi Su

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) with a co-sputtered tin indium gallium zinc oxide (SnInGaZnO) electron barrier layer (EBL) are fabricated. The effect of the SnInGaZnO layer thickness on device characteristics is investigated. With stacking a 250-nm-thick SnInGaZnO EBL in the source/drain region, it introduces an additional potential barrier of around 0.14 V to the channel carriers. Experimental results show that the turn-off voltage of TFTs increases from -0.5 V to about 0 V, the on/off current ratio increases from 1.9 × 10⁵ to 1.9 × 10⁶, and the subthreshold swing decreases from 0.13 V/dec to 0.073 V/dec.

Original language	English
Article number	092108
Journal	Applied Physics Letters
Volume	102
Issue number	9
DOIs	https://doi.org/10.1063/1.4795127
Publication status	Published - 2013 Mar 4

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4795127

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@article{02559c1a231b440f8203f3fa267fca0f,

title = "Performance tuning of InGaZnO thin-film transistors with a SnInGaZnO electron barrier layer",

abstract = "Indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) with a co-sputtered tin indium gallium zinc oxide (SnInGaZnO) electron barrier layer (EBL) are fabricated. The effect of the SnInGaZnO layer thickness on device characteristics is investigated. With stacking a 250-nm-thick SnInGaZnO EBL in the source/drain region, it introduces an additional potential barrier of around 0.14 V to the channel carriers. Experimental results show that the turn-off voltage of TFTs increases from -0.5 V to about 0 V, the on/off current ratio increases from 1.9 × 105 to 1.9 × 106, and the subthreshold swing decreases from 0.13 V/dec to 0.073 V/dec.",

author = "Huang, \{Hau Yuan\} and Wang, \{Shui Jinn\} and Wu, \{Chien Hung\} and Chiang, \{Chen Kuo\} and Su, \{Je Yi\}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan, Republic of China, under Grant Nos. NSC 100-2221-E-006-156-MY2 and NSC 100-2221-E-006-045-MY2, and by the Landmark Project Grant for NCKU's Top-University Project.",

year = "2013",

month = mar,

day = "4",

doi = "10.1063/1.4795127",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "9",

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TY - JOUR

T1 - Performance tuning of InGaZnO thin-film transistors with a SnInGaZnO electron barrier layer

AU - Huang, Hau Yuan

AU - Wang, Shui Jinn

AU - Wu, Chien Hung

AU - Chiang, Chen Kuo

AU - Su, Je Yi

N1 - Funding Information: This work was supported by the National Science Council of Taiwan, Republic of China, under Grant Nos. NSC 100-2221-E-006-156-MY2 and NSC 100-2221-E-006-045-MY2, and by the Landmark Project Grant for NCKU's Top-University Project.

PY - 2013/3/4

Y1 - 2013/3/4

N2 - Indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) with a co-sputtered tin indium gallium zinc oxide (SnInGaZnO) electron barrier layer (EBL) are fabricated. The effect of the SnInGaZnO layer thickness on device characteristics is investigated. With stacking a 250-nm-thick SnInGaZnO EBL in the source/drain region, it introduces an additional potential barrier of around 0.14 V to the channel carriers. Experimental results show that the turn-off voltage of TFTs increases from -0.5 V to about 0 V, the on/off current ratio increases from 1.9 × 105 to 1.9 × 106, and the subthreshold swing decreases from 0.13 V/dec to 0.073 V/dec.

AB - Indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) with a co-sputtered tin indium gallium zinc oxide (SnInGaZnO) electron barrier layer (EBL) are fabricated. The effect of the SnInGaZnO layer thickness on device characteristics is investigated. With stacking a 250-nm-thick SnInGaZnO EBL in the source/drain region, it introduces an additional potential barrier of around 0.14 V to the channel carriers. Experimental results show that the turn-off voltage of TFTs increases from -0.5 V to about 0 V, the on/off current ratio increases from 1.9 × 105 to 1.9 × 106, and the subthreshold swing decreases from 0.13 V/dec to 0.073 V/dec.

UR - https://www.scopus.com/pages/publications/84875133243

UR - https://www.scopus.com/pages/publications/84875133243#tab=citedBy

U2 - 10.1063/1.4795127

DO - 10.1063/1.4795127

M3 - Article

AN - SCOPUS:84875133243

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 092108

ER -

Performance tuning of InGaZnO thin-film transistors with a SnInGaZnO electron barrier layer

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