Performances of two-finger stacked fin quinary indium gallium zinc aluminum oxide thin-film transistors

Li Yi Jian; Hsin Ying Lee; Yung Hao Lin; Ching Ting Lee

doi:10.1016/j.sse.2018.04.008

Performances of two-finger stacked fin quinary indium gallium zinc aluminum oxide thin-film transistors

Li Yi Jian, Hsin Ying Lee, Yung Hao Lin, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The two-finger stacked bottom gate and top gate fin indium gallium zinc aluminum oxide thin-film transistors (IGZAO TFTs) were fabricated. Since the bottom induced channel layer and the top induced channel layer were formed in the stacked TFTs using the bottom gate and the top gate, simultaneously. Consequently, drain-source current and transconductance of the stacked TFTs were enhanced about twice as those of the bottom gate TFTs and the top gate TFTs. The optimal performances of the stacked TFTs could be obtained, when the whole channel layer was induced as the carrier transportation path.

Original language	English
Pages (from-to)	54-57
Number of pages	4
Journal	Solid-State Electronics
Volume	145
DOIs	https://doi.org/10.1016/j.sse.2018.04.008
Publication status	Published - 2018 Jul

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2018.04.008

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title = "Performances of two-finger stacked fin quinary indium gallium zinc aluminum oxide thin-film transistors",

abstract = "The two-finger stacked bottom gate and top gate fin indium gallium zinc aluminum oxide thin-film transistors (IGZAO TFTs) were fabricated. Since the bottom induced channel layer and the top induced channel layer were formed in the stacked TFTs using the bottom gate and the top gate, simultaneously. Consequently, drain-source current and transconductance of the stacked TFTs were enhanced about twice as those of the bottom gate TFTs and the top gate TFTs. The optimal performances of the stacked TFTs could be obtained, when the whole channel layer was induced as the carrier transportation path.",

author = "Jian, {Li Yi} and Lee, {Hsin Ying} and Lin, {Yung Hao} and Lee, {Ching Ting}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology of the Republic of China under contract no. MOST-105-2221-E-006-199-MY3 . Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

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doi = "10.1016/j.sse.2018.04.008",

language = "English",

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AU - Jian, Li Yi

AU - Lee, Hsin Ying

AU - Lin, Yung Hao

AU - Lee, Ching Ting

N1 - Funding Information: This work was supported by the Ministry of Science and Technology of the Republic of China under contract no. MOST-105-2221-E-006-199-MY3 . Publisher Copyright: © 2018 Elsevier Ltd

PY - 2018/7

Y1 - 2018/7

N2 - The two-finger stacked bottom gate and top gate fin indium gallium zinc aluminum oxide thin-film transistors (IGZAO TFTs) were fabricated. Since the bottom induced channel layer and the top induced channel layer were formed in the stacked TFTs using the bottom gate and the top gate, simultaneously. Consequently, drain-source current and transconductance of the stacked TFTs were enhanced about twice as those of the bottom gate TFTs and the top gate TFTs. The optimal performances of the stacked TFTs could be obtained, when the whole channel layer was induced as the carrier transportation path.

AB - The two-finger stacked bottom gate and top gate fin indium gallium zinc aluminum oxide thin-film transistors (IGZAO TFTs) were fabricated. Since the bottom induced channel layer and the top induced channel layer were formed in the stacked TFTs using the bottom gate and the top gate, simultaneously. Consequently, drain-source current and transconductance of the stacked TFTs were enhanced about twice as those of the bottom gate TFTs and the top gate TFTs. The optimal performances of the stacked TFTs could be obtained, when the whole channel layer was induced as the carrier transportation path.

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JO - Solid-State Electronics

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ER -

Performances of two-finger stacked fin quinary indium gallium zinc aluminum oxide thin-film transistors

Abstract

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