This paper reports the dielectric properties of AIN/NiFe/AIN multiferroelectric films that were fabricated by the reactive sputtering system. The permittivity that was relative to thickness and number of NiFe layers was observed from 40 Hz to 30 MHz. In this investigation, we found that the dielectric constant of the AIN/NiFe/AIN/ multilayered film was up to 60 for a nano-scale NiFe interlayer. The data indicated that the dielectric constant of the AIN/NiFe/AIN was strongly dependent on the number of the NiFe layers but weak to their thickness. The dielectric tuniability of AIN/NiFe/AIN was also observed by in this study. The results concluded the dielectric-electric variation of AlN films that are modulated by the NiFe ferromagnetic layers.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2007 Dec 1|
|Event||International Symposium on Advanced Magnetic Materials and Appilications, (ISAMMA 2007) - Jeju, Korea, Republic of|
Duration: 2007 May 28 → 2007 Jun 1
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics