Permittivity modulation study of multiferroic AIN/NiFe/AIN films

D. S. Hung, Y. D. Yao, K. T. Wu, J. C. Hsu, Y. C. Chen, Y. Ding

Research output: Contribution to journalConference articlepeer-review


This paper reports the dielectric properties of AIN/NiFe/AIN multiferroelectric films that were fabricated by the reactive sputtering system. The permittivity that was relative to thickness and number of NiFe layers was observed from 40 Hz to 30 MHz. In this investigation, we found that the dielectric constant of the AIN/NiFe/AIN/ multilayered film was up to 60 for a nano-scale NiFe interlayer. The data indicated that the dielectric constant of the AIN/NiFe/AIN was strongly dependent on the number of the NiFe layers but weak to their thickness. The dielectric tuniability of AIN/NiFe/AIN was also observed by in this study. The results concluded the dielectric-electric variation of AlN films that are modulated by the NiFe ferromagnetic layers.

Original languageEnglish
Pages (from-to)4467-4470
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number12
Publication statusPublished - 2007
EventInternational Symposium on Advanced Magnetic Materials and Appilications, (ISAMMA 2007) - Jeju, Korea, Republic of
Duration: 2007 May 282007 Jun 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics


Dive into the research topics of 'Permittivity modulation study of multiferroic AIN/NiFe/AIN films'. Together they form a unique fingerprint.

Cite this