Permittivity modulation study of multiferroic AIN/NiFe/AIN films

D. S. Hung, Y. D. Yao, K. T. Wu, J. C. Hsu, Yi-Chun Chen, Y. Ding

Research output: Contribution to journalConference article

Abstract

This paper reports the dielectric properties of AIN/NiFe/AIN multiferroelectric films that were fabricated by the reactive sputtering system. The permittivity that was relative to thickness and number of NiFe layers was observed from 40 Hz to 30 MHz. In this investigation, we found that the dielectric constant of the AIN/NiFe/AIN/ multilayered film was up to 60 for a nano-scale NiFe interlayer. The data indicated that the dielectric constant of the AIN/NiFe/AIN was strongly dependent on the number of the NiFe layers but weak to their thickness. The dielectric tuniability of AIN/NiFe/AIN was also observed by in this study. The results concluded the dielectric-electric variation of AlN films that are modulated by the NiFe ferromagnetic layers.

Original languageEnglish
Pages (from-to)4467-4470
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1
EventInternational Symposium on Advanced Magnetic Materials and Appilications, (ISAMMA 2007) - Jeju, Korea, Republic of
Duration: 2007 May 282007 Jun 1

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permittivity
modulation
dielectric properties
interlayers
sputtering

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Hung, D. S. ; Yao, Y. D. ; Wu, K. T. ; Hsu, J. C. ; Chen, Yi-Chun ; Ding, Y. / Permittivity modulation study of multiferroic AIN/NiFe/AIN films. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2007 ; Vol. 4, No. 12. pp. 4467-4470.
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abstract = "This paper reports the dielectric properties of AIN/NiFe/AIN multiferroelectric films that were fabricated by the reactive sputtering system. The permittivity that was relative to thickness and number of NiFe layers was observed from 40 Hz to 30 MHz. In this investigation, we found that the dielectric constant of the AIN/NiFe/AIN/ multilayered film was up to 60 for a nano-scale NiFe interlayer. The data indicated that the dielectric constant of the AIN/NiFe/AIN was strongly dependent on the number of the NiFe layers but weak to their thickness. The dielectric tuniability of AIN/NiFe/AIN was also observed by in this study. The results concluded the dielectric-electric variation of AlN films that are modulated by the NiFe ferromagnetic layers.",
author = "Hung, {D. S.} and Yao, {Y. D.} and Wu, {K. T.} and Hsu, {J. C.} and Yi-Chun Chen and Y. Ding",
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Permittivity modulation study of multiferroic AIN/NiFe/AIN films. / Hung, D. S.; Yao, Y. D.; Wu, K. T.; Hsu, J. C.; Chen, Yi-Chun; Ding, Y.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 4, No. 12, 01.12.2007, p. 4467-4470.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Permittivity modulation study of multiferroic AIN/NiFe/AIN films

AU - Hung, D. S.

AU - Yao, Y. D.

AU - Wu, K. T.

AU - Hsu, J. C.

AU - Chen, Yi-Chun

AU - Ding, Y.

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N2 - This paper reports the dielectric properties of AIN/NiFe/AIN multiferroelectric films that were fabricated by the reactive sputtering system. The permittivity that was relative to thickness and number of NiFe layers was observed from 40 Hz to 30 MHz. In this investigation, we found that the dielectric constant of the AIN/NiFe/AIN/ multilayered film was up to 60 for a nano-scale NiFe interlayer. The data indicated that the dielectric constant of the AIN/NiFe/AIN was strongly dependent on the number of the NiFe layers but weak to their thickness. The dielectric tuniability of AIN/NiFe/AIN was also observed by in this study. The results concluded the dielectric-electric variation of AlN films that are modulated by the NiFe ferromagnetic layers.

AB - This paper reports the dielectric properties of AIN/NiFe/AIN multiferroelectric films that were fabricated by the reactive sputtering system. The permittivity that was relative to thickness and number of NiFe layers was observed from 40 Hz to 30 MHz. In this investigation, we found that the dielectric constant of the AIN/NiFe/AIN/ multilayered film was up to 60 for a nano-scale NiFe interlayer. The data indicated that the dielectric constant of the AIN/NiFe/AIN was strongly dependent on the number of the NiFe layers but weak to their thickness. The dielectric tuniability of AIN/NiFe/AIN was also observed by in this study. The results concluded the dielectric-electric variation of AlN films that are modulated by the NiFe ferromagnetic layers.

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