We demonstrated the good performance of inorganic inverted CH 3 NH 3 PbI 3 perovskite-based solar cells (SCs) with glass/ITO/NiO x /CH 3 NH 3 PbI 3 perovskite/C 60 / room temperature (RT)-sputtered ZnO/Al structure. We adopted spin coating and RT sputtering for the deposition of NiO x and ZnO, respectively. The inorganic hole and electron transport layer of NiO x and RT-sputtered ZnO, respectively, could improve the open-circuit voltage (V OC ), short-circuit current density (J SC ), and power conversion efficiency (η%) of the SCs. We obtained inorganic inverted CH 3 NH 3 PbI 3 perovskite-based SCs with a J SC of 21.96 A/cm 2 , a V OC of 1.02 V, a fill factor (FF%) of 68.2%, and an η% of 15.3% despite the sputtering damage of the RT-sputtered ZnO deposition. Moreover, the RT-sputtered ZnO could function as a diffusion barrier for Al, moisture, and O 2 . The inorganic inverted CH 3 NH 3 PbI 3 perovskite-based SCs demonstrated improved storage reliability.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)