Perpendicular transport properties of a p-GaAs/δ-doped superlattice/n+-GaAs structure

W. C. Liu, C. Y. Sun, D. F. Guo, R. C. Liu

Research output: Contribution to journalArticlepeer-review


The perpendicular transport properties of a p-GaAs/δ-doped doped superlattice/n+-GaAs structure were studied at 300 and 77 K. An interesting S-shaped negative differential resistance (NDR), resulting mainly from avalanche multiplications within the superlattice region, was observed at 300 K. A different NDR phenomenon and an interesting hysteresis behavior were found at 77 K. The multistate NDR is attributed to a sequential subavalanche multiplication process occurring within superlattice periods; holes created by avalanche multiplications play an important role in the transport properties. The hysteresis behavior at 77 K seems to be caused by the heavily accumulated holes, which cannot react synchronously with the applied electric field.

Original languageEnglish
Pages (from-to)81-84
Number of pages4
JournalIEE Proceedings, Part G: Circuits, Devices and Systems
Issue number2
Publication statusPublished - 1993

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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