Persistent photoconductivity in Si delta-doped GaAs at low doping concentration

C. Y. Chen, Tineke Thio, K. L. Wang, K. W. Alt, P. C. Sharma

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9 Citations (Scopus)


In addition to the persistent photoconductivity (PPC) attributed to DX centers in GaAs delta-doped with Si, a weak PPC (WPPC) with a PPC carrier density independent of Si-doping concentration has been generally reported at ambient atmosphere, but the nature of the deep states responsible has not been elucidated. Here, we present the results of a detailed study of the WPPC in δ-GaAs:Si at low-doping densities, NSi≈1-3×1012 cm-2, and ambient pressure. It is concluded that the WPPC does not arise from DX centers but from another deep defect, which is DX-like in the sense that it can be metastably excited. The presence of two distinct DX-like states is apparent from two separate annealing temperatures of the PPC, Ta≈50 K and Tb≈230 K; to the best of our knowledge, the latter is the highest annealing temperature observed in the AlGaAs:Si system.

Original languageEnglish
Pages (from-to)3235-3237
Number of pages3
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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