Persistent photoconductivity in Si delta-doped GaAs at low doping concentration

C. Y. Chen; Tineke Thio; K. L. Wang; K. W. Alt; P. C. Sharma

doi:10.1063/1.122729

Persistent photoconductivity in Si delta-doped GaAs at low doping concentration

C. Y. Chen, Tineke Thio, K. L. Wang, K. W. Alt, P. C. Sharma

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

In addition to the persistent photoconductivity (PPC) attributed to DX centers in GaAs delta-doped with Si, a weak PPC (WPPC) with a PPC carrier density independent of Si-doping concentration has been generally reported at ambient atmosphere, but the nature of the deep states responsible has not been elucidated. Here, we present the results of a detailed study of the WPPC in δ-GaAs:Si at low-doping densities, N_Si≈1-3×10¹² cm^-2, and ambient pressure. It is concluded that the WPPC does not arise from DX centers but from another deep defect, which is DX-like in the sense that it can be metastably excited. The presence of two distinct DX-like states is apparent from two separate annealing temperatures of the PPC, T_a≈50 K and T_b≈230 K; to the best of our knowledge, the latter is the highest annealing temperature observed in the AlGaAs:Si system.

Original language	English
Pages (from-to)	3235-3237
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	22
DOIs	https://doi.org/10.1063/1.122729
Publication status	Published - 1998

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.122729

Cite this

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title = "Persistent photoconductivity in Si delta-doped GaAs at low doping concentration",

abstract = "In addition to the persistent photoconductivity (PPC) attributed to DX centers in GaAs delta-doped with Si, a weak PPC (WPPC) with a PPC carrier density independent of Si-doping concentration has been generally reported at ambient atmosphere, but the nature of the deep states responsible has not been elucidated. Here, we present the results of a detailed study of the WPPC in δ-GaAs:Si at low-doping densities, NSi≈1-3×1012 cm-2, and ambient pressure. It is concluded that the WPPC does not arise from DX centers but from another deep defect, which is DX-like in the sense that it can be metastably excited. The presence of two distinct DX-like states is apparent from two separate annealing temperatures of the PPC, Ta≈50 K and Tb≈230 K; to the best of our knowledge, the latter is the highest annealing temperature observed in the AlGaAs:Si system.",

author = "Chen, {C. Y.} and Tineke Thio and Wang, {K. L.} and Alt, {K. W.} and Sharma, {P. C.}",

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T1 - Persistent photoconductivity in Si delta-doped GaAs at low doping concentration

AU - Chen, C. Y.

AU - Thio, Tineke

AU - Wang, K. L.

AU - Alt, K. W.

AU - Sharma, P. C.

PY - 1998

Y1 - 1998

N2 - In addition to the persistent photoconductivity (PPC) attributed to DX centers in GaAs delta-doped with Si, a weak PPC (WPPC) with a PPC carrier density independent of Si-doping concentration has been generally reported at ambient atmosphere, but the nature of the deep states responsible has not been elucidated. Here, we present the results of a detailed study of the WPPC in δ-GaAs:Si at low-doping densities, NSi≈1-3×1012 cm-2, and ambient pressure. It is concluded that the WPPC does not arise from DX centers but from another deep defect, which is DX-like in the sense that it can be metastably excited. The presence of two distinct DX-like states is apparent from two separate annealing temperatures of the PPC, Ta≈50 K and Tb≈230 K; to the best of our knowledge, the latter is the highest annealing temperature observed in the AlGaAs:Si system.

AB - In addition to the persistent photoconductivity (PPC) attributed to DX centers in GaAs delta-doped with Si, a weak PPC (WPPC) with a PPC carrier density independent of Si-doping concentration has been generally reported at ambient atmosphere, but the nature of the deep states responsible has not been elucidated. Here, we present the results of a detailed study of the WPPC in δ-GaAs:Si at low-doping densities, NSi≈1-3×1012 cm-2, and ambient pressure. It is concluded that the WPPC does not arise from DX centers but from another deep defect, which is DX-like in the sense that it can be metastably excited. The presence of two distinct DX-like states is apparent from two separate annealing temperatures of the PPC, Ta≈50 K and Tb≈230 K; to the best of our knowledge, the latter is the highest annealing temperature observed in the AlGaAs:Si system.

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Persistent photoconductivity in Si delta-doped GaAs at low doping concentration

Abstract

All Science Journal Classification (ASJC) codes

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