Perspective of tunnel-FET for future low-power technology nodes

A. S. Verhulst; D. Verreck; Q. Smets; K. H. Kao; M. Van De Put; R. Rooyackers; B. Sorée; A. Vandooren; K. De Meyer; G. Groeseneken; M. M. Heyns; A. Mocuta; N. Collaert; A. V.Y. Thean

doi:10.1109/IEDM.2014.7047140

Perspective of tunnel-FET for future low-power technology nodes

A. S. Verhulst, D. Verreck, Q. Smets, K. H. Kao, M. Van De Put, R. Rooyackers, B. Sorée, A. Vandooren, K. De Meyer, G. Groeseneken, M. M. Heyns, A. Mocuta, N. Collaert, A. V.Y. Thean

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Citations (Scopus)

Abstract

Theoretically, confined heterostructure p(-n)-i-n (n(-p)-i-p) TFETs are promising candidates for future low-power applications, with n-TFET outperforming p-TFET. An optimal body thickness of about 10nm is predicted for Ga_0.5As_0.5Sb-In_0.53Ga_0.47As n-TFET with I₆₀=20μA/μm. For p-TFETs, stronger confinement may be required to avoid tunneling to the heavy-hole band. An unexploited domain is the insertion of thin heterostructure slabs offering a locally reduced dielectric constant, enhancing both SS and I_on.

Original language	English
Title of host publication	2014 IEEE International Electron Devices Meeting, IEDM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	30.2.1-30.2.4
Edition	February
ISBN (Electronic)	9781479980017
DOIs	https://doi.org/10.1109/IEDM.2014.7047140
Publication status	Published - 2015 Feb 20
Event	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: 2014 Dec 15 → 2014 Dec 17

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Number	February
Volume	2015-February
ISSN (Print)	0163-1918

Other

Other	2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Country/Territory	United States
City	San Francisco
Period	14-12-15 → 14-12-17

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2014.7047140

Cite this

Verhulst, A. S., Verreck, D., Smets, Q., Kao, K. H., Van De Put, M., Rooyackers, R., Sorée, B., Vandooren, A., De Meyer, K., Groeseneken, G., Heyns, M. M., Mocuta, A., Collaert, N., & Thean, A. V. Y. (2015). Perspective of tunnel-FET for future low-power technology nodes. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 30.2.1-30.2.4). Article 7047140 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047140

@inproceedings{c77162142fe44b6aaa50eb7ca03a168b,

title = "Perspective of tunnel-FET for future low-power technology nodes",

abstract = "Theoretically, confined heterostructure p(-n)-i-n (n(-p)-i-p) TFETs are promising candidates for future low-power applications, with n-TFET outperforming p-TFET. An optimal body thickness of about 10nm is predicted for Ga0.5As0.5Sb-In0.53Ga0.47As n-TFET with I60=20μA/μm. For p-TFETs, stronger confinement may be required to avoid tunneling to the heavy-hole band. An unexploited domain is the insertion of thin heterostructure slabs offering a locally reduced dielectric constant, enhancing both SS and Ion.",

author = "Verhulst, {A. S.} and D. Verreck and Q. Smets and Kao, {K. H.} and {Van De Put}, M. and R. Rooyackers and B. Sor{\'e}e and A. Vandooren and {De Meyer}, K. and G. Groeseneken and Heyns, {M. M.} and A. Mocuta and N. Collaert and Thean, {A. V.Y.}",

year = "2015",

month = feb,

day = "20",

doi = "10.1109/IEDM.2014.7047140",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "February",

pages = "30.2.1--30.2.4",

booktitle = "2014 IEEE International Electron Devices Meeting, IEDM 2014",

address = "United States",

edition = "February",

note = "2014 60th IEEE International Electron Devices Meeting, IEDM 2014 ; Conference date: 15-12-2014 Through 17-12-2014",

}

Verhulst, AS, Verreck, D, Smets, Q, Kao, KH, Van De Put, M, Rooyackers, R, Sorée, B, Vandooren, A, De Meyer, K, Groeseneken, G, Heyns, MM, Mocuta, A, Collaert, N & Thean, AVY 2015, Perspective of tunnel-FET for future low-power technology nodes. in 2014 IEEE International Electron Devices Meeting, IEDM 2014. February edn, 7047140, Technical Digest - International Electron Devices Meeting, IEDM, no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 30.2.1-30.2.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 14-12-15. https://doi.org/10.1109/IEDM.2014.7047140

Perspective of tunnel-FET for future low-power technology nodes. / Verhulst, A. S.; Verreck, D.; Smets, Q. et al.
2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 30.2.1-30.2.4 7047140 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Perspective of tunnel-FET for future low-power technology nodes

AU - Verhulst, A. S.

AU - Verreck, D.

AU - Smets, Q.

AU - Kao, K. H.

AU - Van De Put, M.

AU - Rooyackers, R.

AU - Sorée, B.

AU - Vandooren, A.

AU - De Meyer, K.

AU - Groeseneken, G.

AU - Heyns, M. M.

AU - Mocuta, A.

AU - Collaert, N.

AU - Thean, A. V.Y.

PY - 2015/2/20

Y1 - 2015/2/20

N2 - Theoretically, confined heterostructure p(-n)-i-n (n(-p)-i-p) TFETs are promising candidates for future low-power applications, with n-TFET outperforming p-TFET. An optimal body thickness of about 10nm is predicted for Ga0.5As0.5Sb-In0.53Ga0.47As n-TFET with I60=20μA/μm. For p-TFETs, stronger confinement may be required to avoid tunneling to the heavy-hole band. An unexploited domain is the insertion of thin heterostructure slabs offering a locally reduced dielectric constant, enhancing both SS and Ion.

AB - Theoretically, confined heterostructure p(-n)-i-n (n(-p)-i-p) TFETs are promising candidates for future low-power applications, with n-TFET outperforming p-TFET. An optimal body thickness of about 10nm is predicted for Ga0.5As0.5Sb-In0.53Ga0.47As n-TFET with I60=20μA/μm. For p-TFETs, stronger confinement may be required to avoid tunneling to the heavy-hole band. An unexploited domain is the insertion of thin heterostructure slabs offering a locally reduced dielectric constant, enhancing both SS and Ion.

UR - http://www.scopus.com/inward/record.url?scp=84938267018&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938267018&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2014.7047140

DO - 10.1109/IEDM.2014.7047140

M3 - Conference contribution

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 30.2.1-30.2.4

BT - 2014 IEEE International Electron Devices Meeting, IEDM 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 60th IEEE International Electron Devices Meeting, IEDM 2014

Y2 - 15 December 2014 through 17 December 2014

ER -

Verhulst AS, Verreck D, Smets Q, Kao KH, Van De Put M, Rooyackers R et al. Perspective of tunnel-FET for future low-power technology nodes. In 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 30.2.1-30.2.4. 7047140. (Technical Digest - International Electron Devices Meeting, IEDM; February). doi: 10.1109/IEDM.2014.7047140

Perspective of tunnel-FET for future low-power technology nodes

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this