Phase, morphology, and dimension control of CIS powders prepared using a solvothermal process

Chih Hui Chang, Jyh-Ming Ting

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Crystalline chalcopyrite semiconductor CuInSe2 nanostructures were prepared using a solvothermal route. Various amine organic agents were used as the solvents. Cupric chloride, indium chloride, and selenium powders were mixed in a solvent of ethylenediamine or diethylamine. Effects of reaction time, reaction temperature, solvent type, and reactant concentration were studied. The results show that through selective processing conditions, the phase, morphology, and dimensions of the obtained CIS nanostructures can be controlled.

Original languageEnglish
Pages (from-to)4174-4178
Number of pages5
JournalThin Solid Films
Volume517
Issue number14
DOIs
Publication statusPublished - 2009 May 29

Fingerprint

Commonwealth of Independent States
phase control
Powders
ethylenediamine
Nanostructures
chlorides
Selenium
selenium
reaction time
Indium
Amines
indium
amines
routes
Semiconductor materials
Crystalline materials
Processing
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

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Phase, morphology, and dimension control of CIS powders prepared using a solvothermal process. / Chang, Chih Hui; Ting, Jyh-Ming.

In: Thin Solid Films, Vol. 517, No. 14, 29.05.2009, p. 4174-4178.

Research output: Contribution to journalArticle

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AB - Crystalline chalcopyrite semiconductor CuInSe2 nanostructures were prepared using a solvothermal route. Various amine organic agents were used as the solvents. Cupric chloride, indium chloride, and selenium powders were mixed in a solvent of ethylenediamine or diethylamine. Effects of reaction time, reaction temperature, solvent type, and reactant concentration were studied. The results show that through selective processing conditions, the phase, morphology, and dimensions of the obtained CIS nanostructures can be controlled.

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