Phase stability versus the lattice mismatch of (100)Co1-xGax thin films on (100)GaAs

Delroy A. Baugh; A. Alec Talin; R. Stanley Williams; Tsung Chia Kuo; Kang L. Wang

doi:10.1116/1.585756

Phase stability versus the lattice mismatch of (100)Co_1-xGa_x thin films on (100)GaAs

Delroy A. Baugh, A. Alec Talin, R. Stanley Williams, Tsung Chia Kuo, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Thin films of the intermetallic compound Co_1-xGa_x, which has a broad homogeneity range and a continuously variable lattice constant, were grown on the (100) GaAs surface by molecular beam epitaxy. The stoichiometry of the films and the cleanliness of the substrates were determined in situ by Auger electron spectroscopy. The identity and orientation of the phases present in the films were determined ex situ by x-ray diffraction (XRD). The films were annealed to various temperatures in N₂ and reexamined by XRD to detect any chemical interactions between the Co_1-xGa_x and GaAs. Films of Co_1-xGa_x deposited with a 2% lattice mismatch (x = 0.5) reacted with the substrate to produce CoGa₃ at 600 deg;C, whereas films with no detectable mismatch (x = 0.61) did not react until they had been heated to 800 °C.

Original language	English
Pages (from-to)	2154-2157
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	9
Issue number	4
DOIs	https://doi.org/10.1116/1.585756
Publication status	Published - 1991 Jul 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.585756

Cite this

@article{979fe22928a8485ab0faedfb28cb7caa,

title = "Phase stability versus the lattice mismatch of (100)Co1-xGax thin films on (100)GaAs",

abstract = "Thin films of the intermetallic compound Co1-xGax, which has a broad homogeneity range and a continuously variable lattice constant, were grown on the (100) GaAs surface by molecular beam epitaxy. The stoichiometry of the films and the cleanliness of the substrates were determined in situ by Auger electron spectroscopy. The identity and orientation of the phases present in the films were determined ex situ by x-ray diffraction (XRD). The films were annealed to various temperatures in N2 and reexamined by XRD to detect any chemical interactions between the Co1-xGax and GaAs. Films of Co1-xGax deposited with a 2% lattice mismatch (x = 0.5) reacted with the substrate to produce CoGa3 at 600 deg;C, whereas films with no detectable mismatch (x = 0.61) did not react until they had been heated to 800 °C.",

author = "Baugh, {Delroy A.} and Talin, {A. Alec} and Williams, {R. Stanley} and Kuo, {Tsung Chia} and Wang, {Kang L.}",

note = "Publisher Copyright: {\textcopyright} 1991 American Vacuum Society.",

year = "1991",

month = jul,

day = "1",

doi = "10.1116/1.585756",

language = "English",

volume = "9",

pages = "2154--2157",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Phase stability versus the lattice mismatch of (100)Co1-xGax thin films on (100)GaAs

AU - Baugh, Delroy A.

AU - Talin, A. Alec

AU - Williams, R. Stanley

AU - Kuo, Tsung Chia

AU - Wang, Kang L.

PY - 1991/7/1

Y1 - 1991/7/1

N2 - Thin films of the intermetallic compound Co1-xGax, which has a broad homogeneity range and a continuously variable lattice constant, were grown on the (100) GaAs surface by molecular beam epitaxy. The stoichiometry of the films and the cleanliness of the substrates were determined in situ by Auger electron spectroscopy. The identity and orientation of the phases present in the films were determined ex situ by x-ray diffraction (XRD). The films were annealed to various temperatures in N2 and reexamined by XRD to detect any chemical interactions between the Co1-xGax and GaAs. Films of Co1-xGax deposited with a 2% lattice mismatch (x = 0.5) reacted with the substrate to produce CoGa3 at 600 deg;C, whereas films with no detectable mismatch (x = 0.61) did not react until they had been heated to 800 °C.

AB - Thin films of the intermetallic compound Co1-xGax, which has a broad homogeneity range and a continuously variable lattice constant, were grown on the (100) GaAs surface by molecular beam epitaxy. The stoichiometry of the films and the cleanliness of the substrates were determined in situ by Auger electron spectroscopy. The identity and orientation of the phases present in the films were determined ex situ by x-ray diffraction (XRD). The films were annealed to various temperatures in N2 and reexamined by XRD to detect any chemical interactions between the Co1-xGax and GaAs. Films of Co1-xGax deposited with a 2% lattice mismatch (x = 0.5) reacted with the substrate to produce CoGa3 at 600 deg;C, whereas films with no detectable mismatch (x = 0.61) did not react until they had been heated to 800 °C.

UR - http://www.scopus.com/inward/record.url?scp=84915354698&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84915354698&partnerID=8YFLogxK

U2 - 10.1116/1.585756

DO - 10.1116/1.585756

M3 - Article

AN - SCOPUS:84915354698

SN - 1071-1023

VL - 9

SP - 2154

EP - 2157

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Phase stability versus the lattice mismatch of (100)Co_1-xGa_x thin films on (100)GaAs

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this