Phase transformation of tantalum on different dielectric films with plasma treatment

Chun Chieh Huang, Ying Lang Wang, Shih Chieh Chang, Gwo Jen Hwang, Jow Lay Huang

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


A preferred low-resistivity α-phase tantalum (Ta) film is directly obtained on a carbon doped oxide (SiOCH) substrate, which is treated by 5% H2/He mixed gas plasma for 300 s, while a β-phase Ta film is formed on fluorine silicate glass, silicon oxynitride and plasma-enhanced chemical vapor oxide substrates irrespective of the plasma treatment. The phase transformation and the resistivity change of the Ta films on the SiOCH films with respect to the plasma treatment time are investigated by X-ray diffraction analysis. Moreover, the results of X-ray photoelectron spectroscopy indicate that the formation of α-Ta is dependent on the surface composition of the SiOCH substrates.

Original languageEnglish
Pages (from-to)286-288
Number of pages3
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2006 Mar 1
EventProceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
Duration: 2004 Nov 122004 Nov 14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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