Phenomenological model for "stress memorization" effect from a capped-poly process

L. S. Adam, C. Chiu, M. Huang, X. Wang, Y. Wang, S. Singh, Y. Chen, H. Bu, J. Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

NMOSFET drive current improvement by a disposable Stressor or a capped-poly process has been reported recently in the literature[1]. The retained drive current gain even after the removal of the Stressor film is attributed to a stress "memorization" effect. A phenomenological model and numerical simulations showing the memorized stress are reported for the first time in this paper. An irreversible shape change of the polysilicon gate during the process is simulated by a plastic deformation model and the final resulting channel stress and associated Ids gain are analyzed.

Original languageEnglish
Title of host publication2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages139-142
Number of pages4
ISBN (Print)4990276205, 9784990276201
DOIs
Publication statusPublished - 2005
Event2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 - Tokyo, Japan
Duration: 2005 Sept 12005 Sept 3

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2005

Other

Other2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
Country/TerritoryJapan
CityTokyo
Period05-09-0105-09-03

All Science Journal Classification (ASJC) codes

  • General Engineering

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