Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, Wei Ping Lin, Tsung Hsun Yang, J. I. Chyi

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Abstract

We demonstrate a GaN-based phosphor-free near-white-light light-emitting-diode (LED) structure that operates in the visible wavelengths and offers broadening and flattening optical bandwidth performance. The incorporation of GaN-based dual wavelengths (blue and green) multiple-quantum-wells with a transverse p-n junction produces a device which can directly generate stable and near visible white-light emissions. The shape of the optical spectra (440-560 nm) are invariable from low to very high levels of bias currents. The problems of nonuniform carrier distribution and bias dependent electroluminescence spectra that occur in traditional phosphor-free white-light or near-white-light LEDs (with vertical p-n junctions) are eliminated by the demonstrated structure.

Original languageEnglish
Pages (from-to)2593-2595
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number24
DOIs
Publication statusPublished - 2006 Dec 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Shi, J. W., Huang, H. Y., Wang, C. K., Sheu, J. K., Lai, W. C., Wu, Y. S., Chen, C. H., Chu, J. T., Kuo, H. C., Lin, W. P., Yang, T. H., & Chyi, J. I. (2006). Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light. IEEE Photonics Technology Letters, 18(24), 2593-2595. https://doi.org/10.1109/LPT.2006.887362