Phosphor-free GaN-based transverse junction white-light light-emitting diodes with regrown n-type regions

J. W. Shi, C. C. Chen, C. K. Wang, C. S. Lin, J. K. Sheu, W. C. Lai, C. H. Kuo, C. J. Tun, T. H. Yang, F. C. Tsao, J. I. Chyi

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


In this study, we demonstrate a GaN-based phosphor-free white-light light-emitting diode (LED), which is composed of GaN-based dual-wavelength (blue and yellow-green) multiple-quantum-wells (MQWs) and a transverse p-n junction. The device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped MQWs. The problems related to the bias-dependent shape of the electroluminescence spectra that occur in traditional phosphor-free white-light LEDs (with vertical p-n junctions) are greatly minimized. The current-voltage performance of our device is comparable to that of the commercially available phosphor white-light LEDs. In addition, the dynamic measurement results indicate that we can attain a much higher modulation bandwidth (22 versus 3 MHz) with this device than with the currently available commercial ones.

Original languageEnglish
Pages (from-to)449-451
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number6
Publication statusPublished - 2008 Mar 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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