Phosphor-free GaN-based transverse junction white-light light-emitting diodes with regrown n-type regions

J. W. Shi; C. C. Chen; C. K. Wang; C. S. Lin; J. K. Sheu; W. C. Lai; C. H. Kuo; C. J. Tun; T. H. Yang; F. C. Tsao; J. I. Chyi

doi:10.1109/LPT.2008.916966

Phosphor-free GaN-based transverse junction white-light light-emitting diodes with regrown n-type regions

J. W. Shi
, C. C. Chen
, C. K. Wang
, C. S. Lin
, J. K. Sheu
, W. C. Lai
, C. H. Kuo
, C. J. Tun
, T. H. Yang
, F. C. Tsao
, J. I. Chyi

Department of Photonics

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

In this study, we demonstrate a GaN-based phosphor-free white-light light-emitting diode (LED), which is composed of GaN-based dual-wavelength (blue and yellow-green) multiple-quantum-wells (MQWs) and a transverse p-n junction. The device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped MQWs. The problems related to the bias-dependent shape of the electroluminescence spectra that occur in traditional phosphor-free white-light LEDs (with vertical p-n junctions) are greatly minimized. The current-voltage performance of our device is comparable to that of the commercially available phosphor white-light LEDs. In addition, the dynamic measurement results indicate that we can attain a much higher modulation bandwidth (22 versus 3 MHz) with this device than with the currently available commercial ones.

Original language	English
Pages (from-to)	449-451
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	20
Issue number	6
DOIs	https://doi.org/10.1109/LPT.2008.916966
Publication status	Published - 2008 Mar 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2008.916966

Cite this

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title = "Phosphor-free GaN-based transverse junction white-light light-emitting diodes with regrown n-type regions",

abstract = "In this study, we demonstrate a GaN-based phosphor-free white-light light-emitting diode (LED), which is composed of GaN-based dual-wavelength (blue and yellow-green) multiple-quantum-wells (MQWs) and a transverse p-n junction. The device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped MQWs. The problems related to the bias-dependent shape of the electroluminescence spectra that occur in traditional phosphor-free white-light LEDs (with vertical p-n junctions) are greatly minimized. The current-voltage performance of our device is comparable to that of the commercially available phosphor white-light LEDs. In addition, the dynamic measurement results indicate that we can attain a much higher modulation bandwidth (22 versus 3 MHz) with this device than with the currently available commercial ones.",

author = "Shi, \{J. W.\} and Chen, \{C. C.\} and Wang, \{C. K.\} and Lin, \{C. S.\} and Sheu, \{J. K.\} and Lai, \{W. C.\} and Kuo, \{C. H.\} and Tun, \{C. J.\} and Yang, \{T. H.\} and Tsao, \{F. C.\} and Chyi, \{J. I.\}",

year = "2008",

month = mar,

day = "15",

doi = "10.1109/LPT.2008.916966",

language = "English",

volume = "20",

pages = "449--451",

journal = "IEEE Photonics Technology Letters",

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T1 - Phosphor-free GaN-based transverse junction white-light light-emitting diodes with regrown n-type regions

AU - Shi, J. W.

AU - Chen, C. C.

AU - Wang, C. K.

AU - Lin, C. S.

AU - Sheu, J. K.

AU - Lai, W. C.

AU - Kuo, C. H.

AU - Tun, C. J.

AU - Yang, T. H.

AU - Tsao, F. C.

AU - Chyi, J. I.

PY - 2008/3/15

Y1 - 2008/3/15

N2 - In this study, we demonstrate a GaN-based phosphor-free white-light light-emitting diode (LED), which is composed of GaN-based dual-wavelength (blue and yellow-green) multiple-quantum-wells (MQWs) and a transverse p-n junction. The device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped MQWs. The problems related to the bias-dependent shape of the electroluminescence spectra that occur in traditional phosphor-free white-light LEDs (with vertical p-n junctions) are greatly minimized. The current-voltage performance of our device is comparable to that of the commercially available phosphor white-light LEDs. In addition, the dynamic measurement results indicate that we can attain a much higher modulation bandwidth (22 versus 3 MHz) with this device than with the currently available commercial ones.

AB - In this study, we demonstrate a GaN-based phosphor-free white-light light-emitting diode (LED), which is composed of GaN-based dual-wavelength (blue and yellow-green) multiple-quantum-wells (MQWs) and a transverse p-n junction. The device was realized by the regrowth of n-type GaN layers on the sidewall of p-type GaN and undoped MQWs. The problems related to the bias-dependent shape of the electroluminescence spectra that occur in traditional phosphor-free white-light LEDs (with vertical p-n junctions) are greatly minimized. The current-voltage performance of our device is comparable to that of the commercially available phosphor white-light LEDs. In addition, the dynamic measurement results indicate that we can attain a much higher modulation bandwidth (22 versus 3 MHz) with this device than with the currently available commercial ones.

UR - https://www.scopus.com/pages/publications/54249157676

UR - https://www.scopus.com/pages/publications/54249157676#tab=citedBy

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DO - 10.1109/LPT.2008.916966

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AN - SCOPUS:54249157676

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SP - 449

EP - 451

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 6

ER -

Phosphor-free GaN-based transverse junction white-light light-emitting diodes with regrown n-type regions

Abstract

All Science Journal Classification (ASJC) codes

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