Phosphorous doped Ru film for advanced Cu diffusion barriers

Dung Ching Perng, Jia Bin Yeh, Kuo Chung Hsu

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Copper diffusion barrier properties of phosphorous doped Ru film are studied. Phosphorous out-diffusion to Ru from underneath phosphosilicate glass (PSG) layer results in P doped Ru film. The doped Ru film improves copper barrier properties and has excellent thermal stability. XRD graph indicates that there is no copper silicide and ruthenium silicide formations after annealing at 550 °C for 30 min in vacuum. This result is consistant with AES depth profiles which show no Cu, Ru, O and Si inter-diffusion. The phosphorous doped Ru barrier also blocks oxygen's diffusion to copper from the PSG layer. The phosphorous doped Ru film could be an alternative Cu diffusion barrier for advanced Cu interconnects.

Original languageEnglish
Pages (from-to)6059-6062
Number of pages4
JournalApplied Surface Science
Volume254
Issue number19
DOIs
Publication statusPublished - 2008 Jul 30

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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