Phosphorous doped Ru film for advanced Cu diffusion barriers

Dung Ching Perng; Jia Bin Yeh; Kuo Chung Hsu

doi:10.1016/j.apsusc.2008.02.160

Phosphorous doped Ru film for advanced Cu diffusion barriers

Dung Ching Perng, Jia Bin Yeh, Kuo Chung Hsu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Copper diffusion barrier properties of phosphorous doped Ru film are studied. Phosphorous out-diffusion to Ru from underneath phosphosilicate glass (PSG) layer results in P doped Ru film. The doped Ru film improves copper barrier properties and has excellent thermal stability. XRD graph indicates that there is no copper silicide and ruthenium silicide formations after annealing at 550 °C for 30 min in vacuum. This result is consistant with AES depth profiles which show no Cu, Ru, O and Si inter-diffusion. The phosphorous doped Ru barrier also blocks oxygen's diffusion to copper from the PSG layer. The phosphorous doped Ru film could be an alternative Cu diffusion barrier for advanced Cu interconnects.

Original language	English
Pages (from-to)	6059-6062
Number of pages	4
Journal	Applied Surface Science
Volume	254
Issue number	19
DOIs	https://doi.org/10.1016/j.apsusc.2008.02.160
Publication status	Published - 2008 Jul 30

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2008.02.160

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@article{92aecef27ccc43a8b76757c8f2325da2,

title = "Phosphorous doped Ru film for advanced Cu diffusion barriers",

abstract = "Copper diffusion barrier properties of phosphorous doped Ru film are studied. Phosphorous out-diffusion to Ru from underneath phosphosilicate glass (PSG) layer results in P doped Ru film. The doped Ru film improves copper barrier properties and has excellent thermal stability. XRD graph indicates that there is no copper silicide and ruthenium silicide formations after annealing at 550 °C for 30 min in vacuum. This result is consistant with AES depth profiles which show no Cu, Ru, O and Si inter-diffusion. The phosphorous doped Ru barrier also blocks oxygen's diffusion to copper from the PSG layer. The phosphorous doped Ru film could be an alternative Cu diffusion barrier for advanced Cu interconnects.",

author = "Perng, {Dung Ching} and Yeh, {Jia Bin} and Hsu, {Kuo Chung}",

year = "2008",

month = jul,

day = "30",

doi = "10.1016/j.apsusc.2008.02.160",

language = "English",

volume = "254",

pages = "6059--6062",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "19",

}

TY - JOUR

T1 - Phosphorous doped Ru film for advanced Cu diffusion barriers

AU - Perng, Dung Ching

AU - Yeh, Jia Bin

AU - Hsu, Kuo Chung

PY - 2008/7/30

Y1 - 2008/7/30

N2 - Copper diffusion barrier properties of phosphorous doped Ru film are studied. Phosphorous out-diffusion to Ru from underneath phosphosilicate glass (PSG) layer results in P doped Ru film. The doped Ru film improves copper barrier properties and has excellent thermal stability. XRD graph indicates that there is no copper silicide and ruthenium silicide formations after annealing at 550 °C for 30 min in vacuum. This result is consistant with AES depth profiles which show no Cu, Ru, O and Si inter-diffusion. The phosphorous doped Ru barrier also blocks oxygen's diffusion to copper from the PSG layer. The phosphorous doped Ru film could be an alternative Cu diffusion barrier for advanced Cu interconnects.

AB - Copper diffusion barrier properties of phosphorous doped Ru film are studied. Phosphorous out-diffusion to Ru from underneath phosphosilicate glass (PSG) layer results in P doped Ru film. The doped Ru film improves copper barrier properties and has excellent thermal stability. XRD graph indicates that there is no copper silicide and ruthenium silicide formations after annealing at 550 °C for 30 min in vacuum. This result is consistant with AES depth profiles which show no Cu, Ru, O and Si inter-diffusion. The phosphorous doped Ru barrier also blocks oxygen's diffusion to copper from the PSG layer. The phosphorous doped Ru film could be an alternative Cu diffusion barrier for advanced Cu interconnects.

UR - http://www.scopus.com/inward/record.url?scp=45049084092&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45049084092&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2008.02.160

DO - 10.1016/j.apsusc.2008.02.160

M3 - Article

AN - SCOPUS:45049084092

SN - 0169-4332

VL - 254

SP - 6059

EP - 6062

JO - Applied Surface Science

JF - Applied Surface Science

IS - 19

ER -

Phosphorous doped Ru film for advanced Cu diffusion barriers

Abstract

All Science Journal Classification (ASJC) codes

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